Dehnung und kristallene Defekte in den Epitaxial- GaN Schichten studierten durch hochauflösende Röntgenbeugung

Abstract

The scope of this thesis is to study the strain state, dislocation densities and other microstructuralfeatures of GaN-based layers grown by metalorganic vapor phase epitaxy(MOVPE) on (0001) sapphire and (0001) 6H-SiC substrates using x-ray techniques