Enya Y.

Kitamura S.

Miyake H.

Pan C.-C.

Takagi S.

Takeuchi T.

Tyagi A.

Usui A.

Yamamoto S.

Yanashima K.

We carried out the selective-area growth of GaN and fabricated InGaN/GaN MQWs on non- and semi-polar bulk GaN substrates by MOVPE. The differences in the GaN structures and the In incorporation of InGaN/GaN MQWs grown on non- and semi-polar GaN substrates were investigated. In the case of selective-area growth, different GaN structures were obtained on 
                     
                     
                   GaN, 
                     
                     
                   GaN, and 
                     
                     
                   GaN substrates. A repeating pattern of 
                     
                     
                   and 
                     
                     
                   facets appeared on 
                     
                     
                   GaN. Then, we fabricated InGaN/GaN MQWs on the facet structures on 
                     
                     
                   GaN. The emission properties characterized by cathodoluminescence were different for 
                     
                     
                   and 
                     
                     
                   facets. On the other hand, for InGaN/GaN MQWs on non- and semi-polar GaN substrates, steps along the a-axis were observed by AFM. In particular on 
                     
                     
                   GaN, undulations and undulation bunching appeared. Photoluminescence characterization indicated that In incorporation increased with the off-angle from the m-plane and also depended on the polarity.</jats:p

Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

Abstract

Similar works

Full text

Available Versions

Crossref