This paper presents experimental evaluation of mechanical stress effects in SOI (Silicon on Insulator) devices. Especially, this study focuses on the interaction between mechanical stress and parasitic bipolar effects of SOI devices. The mechanical stress effects of SOI devices are evaluated using a four- point bending test. It is demonstrated that the parasitic bipolar effects acceleares the electrical variation induced by the mechanical stress effects.第30回マイクロエレクトロニクスシンポジウム 秋季大会 (MES2020), 2020年9月17日-18日, パナソニックリゾート大阪・オンラインによる双方向ライブ配
