The spike‐timing‐dependent plasticity (STDP) characteristic of the memristor plays an important role in the development of neuromorphic network computing in the future. The STDP characteristics were observed in different memristors based on different kinds of materials. The investigation regarding the influences of device hysteresis characteristic, the initial conductance of the memristors, and the waveform of the voltage pulses applied to the memristor as preneuron voltage spike and postneuron voltage spike on the STDP behavior of memristors are reviewed
