The high-quality GaN microdisks with InGaN/GaN quantum wells (QWs) and InN microdisks were grown on γ-LiAlO2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The samples were analysed using scanning electron microscopy, X-ray diffraction, photoluminescence, cathodoluminescence and high-resolution transmission electron microscope. The characteristics of the GaN microdisks and InN microdisks were studied and the effect of growth temperature was evaluated
