Based on the coherent radiation from an undulator source, extreme UV interference lithography (EUV-IL) technology is considered as the leading candidate for future nodes of high-volume semiconductor manufacturing. The throughput of this technique is much higher than that of traditional lithography methods such as e-beam lithography (EBL) and laser interference lithography (LIL). Different types of interference schemes based on reflection mirrors and transmission diffraction masks have been described in this chapter. Achromatic Talbot lithography (ATL) and the soft X-ray interference lithography (SXIL) with different photon energies have also been developed to produce highly dense, high-resolution periodic nanostructures. Two scan-exposure techniques, one is the method employing the broadband Talbot effect and the other based on the multi-grating EUV-IL with an order sorting aperture (OSA), have been used to obtain periodic nanostructures over large areas. Applications of EUV-IL on EUV-resist testing and nano-science have been illustrated
