The aim of present research is to investigate dynamic stress analysis for microstructure of Cu/Low-K wafer subjected to wirebonding predicted by finite element software ANSYS/LS-DYNA. Two major analyses are conducted in the present research. In the first, the characteristic of heat affected zone (HAZ) and free air ball (FAB) on ultra thin Au wire have been carefully experimental measured. Secondary, the dynamic response on Al pad/beneath the pad of Cu/low-K wafer during wirebonding process has been successfully predicted by finite element analysis (FEA). Tensile mechanical properties of ultra thin wire before/after electric flame-off (EFO) process have been investigated by self-design pull test fixture. The experimental obtained hardening value has significantly influence on localize stressed area on Al pad. This would result in Al pad squeezing around the smashed FAB during impact stage and the consequent thermosonic vibration stage. Microstructure of FAB and HAZ are also carefully measured by micro/nano indentation instruments. All the measured data serves as material inputs for the FEA explicit software ANSYS/LS-DYNA. Because the crack of low-k layer and delamination of copper via are observed, dynamic transient analysis is performed to inspect the overall stress/strain distributions on the microstructure of Cu/low-k wafer. Special emphasizes are focused on the copper via layout and optimal design of Cu/low-k microstructure. It is also shown that the Al pad can be replaced by Al-Cu alloy pad or Cu pad to avoid large deformation on pad and cracking beneath the surface. A series of comprehensive experimental works and FEA predictions have been performed to increase bondability and reliability in this study
