The radio frequency discharge plasma sources are widely utilized to prepare functional thin films and to etch insulated layers in semiconductor devices in microelectronic industry. Especially, a capacitively coupled plasma (CCP) is the most popular discharge because the equipment is very simple and almost maintenance free. However, there is a problem such as low-density plasma under low-gas pressure less than 10 Pa, that is, low processing rate. In this chapter, the production principle of conventional CCP and the special CCP with various electrodes and magnets is reviewed. The applications prepared by the special CCP system are also presented. Finally, the future plan including problems is described
