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Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature
Authors
Cyril Calvez
Thibaut Chailloux
Dominique Planson
Dominique Tournier
Publication date
21 September 2014
Publisher
HAL CCSD
Abstract
International audienceThe aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamical electrical characteristics have been measured for temperatures from 80K to 525K
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oai:HAL:hal-02132486v1
Last time updated on 23/03/2021