Effect of microwave irradiation on radiative recombination of GaAs

Abstract

The paper considers the impact of powerful short-term microwave radiation (f= 2.45 GHz) on the defect states of GaAs monocrystals by investigating the luminescence spectra in a domain of 0.6–2.5 μm at 77 K. It has been found experimentally that microwave treatment affects the luminescence characteristics of crystals due to variation of concentration of centers of radiative and nonradiative recombination. The results of the inquiries show advantages of application of microwave radiation in technological processes for modification of the impurity-defect subsystem of semiconductor materials