Calculation of current-voltage characteristics of a single-electron transistor with discrete spectrum of energies in the island

Abstract

The paper contains the results of calculation of current-voltage characteristics (CVC) of a single-electron transistor with discrete spectrum of energies based on the extended orthodox theory. The calculation of curves is carried out with the aid of the Monte-Carlo procedure. The transistor model describes the transport of electrons and holes in the device. The numerical results show that the fine structure of the CVC depends strongly on the density of states and on distance between the levels of carriers’ energies in the island