Atesci, H.

Coneri, F.

Gelling, W.

Hilgenkamp, J.W.M.

Ruitenbeek, J.M. van

International Journal of Molecular Sciences

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to     − 2     V. A non-electrostatic mechanism takes over for gate voltages below     − 2     V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4

Hasan Atesci

Wouter Gelling

Francesco Coneri

Hans Hilgenkamp

Jan Van Ruitenbeek

Multidisciplinary Digital Publishing Institute

ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4

Atesci, Hasan

Gelling, Wouter

Coneri, Francesco

Hilgenkamp, Hans

van Ruitenbeek, Jan M.

NARCIS 

On the nature of ionic liquid gating of La2−xSrxCuO4

On the nature of ionic liquid gating of La2-xSrxCuO4

Leiden University Scholary Publications

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.</p

University of Twente Research Information

English

On the nature of ionic liquid gating of La2−xSrxCuO4

Jan van Ruitenbeek

Crossref

On the nature of ionic liquid gating of La2-xSrxCuO4

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Multidisciplinary Digital Publishing Institute

NARCIS

NARCIS

Leiden University Scholary Publications

University of Twente Research Information

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