Features crystal growth method “synthesis-solute-diffusion”when applied ultrasonic field are consid-ered. Dependence of the crystal optical transmission heterogeneity frequency ultrasonic vibrations deter-mined. System Tests showed that the optimal vibration frequency that provided a homogeneous crystals 
and permitting the maintenance of the solidification front in a predetermined position with an accuracy of 
±5% frequency is 4 MHz±5. Comparison of the optimum frequency ultrasonic vibrations to increase uni-formity in the mode of crystals convective transport under the Czochralski method and conditions of diffu-sive transfer method indicates a significant difference between these frequencies, i.e. character determines 
the transfer conditions of optimization process.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3632

Emelyanov, S.G.

Kosushkin, V.G.

Kozhitov, L.V.

Kozhitov, S.L.

Parkhomenko, Yu.N.

SocioEconomic Challenges Journal (Sumy State University)

JOURNAL OF NANO- AND ELECTRONIC PHYSICS ЖУРНАЛ НАНО- ТА ЕЛЕКТРОННОЇ ФІЗИКИ 
Vol. 6 No 3, 03042(3pp) (2014) Том 6 № 3, 03042(3cc) (2014) 
 
 
The article was reported at the International Conference «The Advanced Technology, Equipment and Analytical Systems for Materials», Kursk, 13-14 May, 2014 
2077-6772/2014/6(3)03042(3) 03042-1  2014 Sumy State University 
Crystal Growth Mechanism in" Synthesis-solute-diffusion" Method in Ultrasonic Field 
 
V.G. Kosushkin1,*, S.L. Kozhitov2, S.G. Emelyanov3, Yu.N. Parkhomenko2, L.V. Kozhitov2 
 
1 Bauman Moscow State Technical University (Branch in Kaluga), 2, Bazhenov Str., 248000 Kaluga, Russia 
2 National University of Science and Technology MISIS, 4, Leninskii Pr., 119049 Moscow, Russia 
3 Southwest State University, 94, 50 let Oktyabrya, 305040 Kursk, Russia 
 
(Received 19 May 2014; published online 15 July 2014) 
 
Features crystal growth method “synthesis-solute-diffusion”when applied ultrasonic field are consid-
ered. Dependence of the crystal optical transmission heterogeneity frequency ultrasonic vibrations deter-
mined. System Tests showed that the optimal vibration frequency that provided a homogeneous crystals 
and permitting the maintenance of the solidification front in a predetermined position with an accuracy of 
 5 % frequency is 4 MHz  5. Comparison of the optimum frequency ultrasonic vibrations to increase uni-
formity in the mode of crystals convective transport under the Czochralski method and conditions of diffu-
sive transfer method indicates a significant difference between these frequencies, i.e. character determines 
the transfer conditions of optimization process. 
 
Keywords: SSD-method, Ultrasonic vibrations, Homogeneity, Optimization. 
 
 PACS numbers: 61.48.De, 81. – b 
 
 
                                                          
* kosushkin@gmail.com 
1. INTRODUCTION 
 
This method can be attributed to a group of directional 
solidification in the temperature gradient in the crystalli-
zation from solutions in molten metals. The advantage of 
this group of methods is the possibility to obtain crystals 
and films AIIIBV compounds at a relatively low tempera-
ture and pressure. This method was tested in the prepara-
tion of such compounds as single crystals of gallium and 
indium phosphide (partial pressure of phosphorus vapor 
at a temperature above the melting point of which is 60 
and 30 atmospheres, respectively). 
The essence of the method is as follows. In a sealed 
evacuated reactor (Fig. 1) is placed in a crucible loaded 
with a hitch member and the third group on the bottom 
of the crucible is placed hinge element of the fifth group 
 
 
 
Fig. 1 – Method of " synthesis- solution- diffusion". 1 - reactor, 
2 - melt element of the fifth group, 3 - linkage element of the 
third group 
 
2. EXPERIMENTAL 
 
Reactor sealed in an oven set a temperature distri-
bution in which the depth of the melt in the crucible is 
created by a temperature gradient, and the fifth group 
element is maintained at a temperature at which its 
vapor pressure is greater than the dissociation pressure 
of the compound at a surface temperature of the melt. 
Evaporating element of the fifth group reacts at the 
surface of the melt in the crucible with the fifth group 
element and forms a compound film. This film is dis-
solved and the fifth group element is diffused into the 
lower portion of the crucible where the crystal growth 
begins. Growth rate is small, but the process takes 
place in conditions close to equilibrium, which ensures 
high quality and purity single crystals. 
You can select the elementary stage of the process: 
1. Evaporation of the fifth group element. 
2. Reaction on the surface with the metal in crucible 
and form a compound film. 
3. Dissolution of the film in the melt, diffusion of the 
fifth group element under the action of the temperature 
gradient. 
4. Crystallization of the compound on the bottom of 
crucible. 
The rate of dissolution of gallium arsenide gallium 
melt was first defined by [2]. 
The analysis of experimental data, that the dissolu-
tion rate in the system can be described by the law of 
Nernst: 
 
 eff
m
V S C
t

     (1) 
 
where Veff – effective rate of dissolution, m – amount 
of undissolved material, C – the difference between 
the real and the liquidus concentration of the solute, t – 
dissolution time, s – the contact area of gallium and 
gallium arsenide. 
Temperature dependence of the effective dissolution 
rate presented in a logarithmic scale, placed on a 
straight line, with an apparent activation energy of 
25.3  5 kJ∙mol for gallium arsenide. It confirms the 
exponential dependence of the effective dissolution rate 
 V.G. KOSUSHKIN, S.L. KOZHITOV, ET AL. J. NANO- ELECTRON. PHYS. 6, 03042 (2014) 
 
 
03042-2 
from temperature. The obtained value of the activation 
energy coincided with the known data. 
We have found that the diffusion rate can be deter-
mined based on the theory of non-stationary diffusion 
kinetics. It has been shown that the rate of diffusion 
depends on the time of the process and can be deter-
mined based on the theory of non-stationary diffusion 
kinetics. In the boundary conditions of limited source 
diffusion in semi-infinite space, the basic equation of 
unsteady diffusion kinetics has the form: 
 
 
2
0
erfc( exp( )
2
erfck( ))
2
x k k
x t
D DDt
C C
t x
D Dt
 
   
 
 
  
 
 (2) 
 
where k – rate constant of diffusion in the interpreta-
tion of Frank-Kamenetsky, C – concentration of the 
reactant. 
Analysis of the equation (2) shows that the de-
scribed process conditions: 
1. Diffusion in the boundary of the melt flow equal to 
the macroscopic reaction rate and which can be found 
by differentiating the formula (2), is 
 
  
2
0 exp erfck
k
J kC t D
D
 
  
 
 (3) 
 
The peculiarity of the problem is that the transition 
from the kinetic overgrown (initial stage of the process) 
into the diffusion takes place in time. At the initial 
time t  0, equation (3) yields: J  k C0, i.e. the reaction 
proceeds in the kinetic region and its rate is deter-
mined by the speed of reaction. If we consider that the 
second form of the integral will probability decreases 
with increasing t faster, than e  – t2, so the macroscopic 
reaction rate decreases with time. 
In the limit for large t, we obtain: 
 
 0
D
J C
t
  (4) 
 
3. RESULT AND ANALYSES 
 
This process proceeds to the kinetic region of the 
diffusion. Table 1 shows data for calculating the rate 
constant of diffusion of arsenic in gallium depending on 
temperature. 
Assuming that the crystal grows in the heavy of 
breakages steps atoms coming from the melt to the 
interface with further propagation speed monomolecu-
lar layer to completely fill in the first place  
 
Table 1– Dependence of the rate of diffusion of arsenic in 
gallium temperature 
 
1 / Т.103 К k, см.с 
0,93 0,0009 
0,85 0,0021 
0,79 0,0043 
 
 
2 ln
kp
a
kT




  (5) 
 
where a is the distance between atoms ,  – energy of 
one bond between atoms  k – Boltzmann constant,  – 
saturation associated with supersaturating equality 
   – 1. 
As an example, to assess the relative importance of 
the rate of crystallization in the total rate of the process 
in terms of the method analyze present payment rate 
for this stage crystals of indium phosphide. Binding 
energy  determined based on the heat of solution of 
phosphorus in molten indium: 
 
 142,6 10 /
2
H
erg at
N


    (6) 
 
Table 2 shows the values of the critical radius of nuclei 
at different temperatures and supersaturating. 
An estimate of the rate formation showed that at 
about a thousand degrees Celsius and 0.4 supersaturat-
ing, nucleation rate amounted to 6,5∙106 s – 1. Travel 
speed step at a thickness of the diffusion layer one 
hundredth centimeter can be determined from the rela-
tionship: 
 
 2 0 (ln ) 1V a D N
a

        (7) 
 
For the conditions above, the tangential speed of 
growth is 63.7 cm/s. Diffusive nature of the process is 
also confirmed by experiments to determine the de-
pendence of the rate of crystal growth in terms of the 
temperature of this method. 
The speed limit of the process rate of diffusion al-
lowed using this method for the experimental determi-
nation of the diffusion coefficients of the fifth group in 
the melt element of the third group. Consideration of 
the kinetic features of diffusion in terms of the method 
reveals two kinetic region - region decreases (changing) 
the rate of diffusion and diffusion rate constant region. 
 
Table 2 – Dependence of the critical radius of the nucleus hypothermia at different temperatures 
 
Т /  0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 
1079 23,5 12,3 6,55 6,66 5,53 4,47 4,22 3,81 3,49 
1093 23,1 12,0 8,39 6,54 5,43 4,68 4,05 3,75 3,43 
1113 22,7 11,8 8,34 6,42 5,33 4,60 4,07 3,68 3,31 
1133 21,9 11,4 7,95 6,20 5,15 4,44 3,94 3,55 3,25 
1153 21,5 11,2 7,82 6,10 5,06 4,36 3,87 3,49 3,19 
1173 21,5 11,0 7,69 5,99 4,97 4,29 3,80 3,43 3,14 
1213 20,4 10,7 7,44 5,80 4,81 4,15 3,68 3,32 3,04 
 
 
 
 CRYSTAL GROWTH MECHANISM IN SSD-METHOD… J. NANO- ELECTRON. PHYS. 6, 03042 (2014) 
 
 
03042-3 
In the "stationary" stage of the process, when the 
rate of dissolution and crystallization were agreed, the 
temperature dependence of the diffusion coefficients 
was calculated. The results are shown on Fig. 3. 
 
 
 
Fig. 2 – Temperature dependence of the diffusion coefficients 
of phosphorus and arsenic in gallium and indium for the ex-
perimentally investigated temperature ranges 
 
Crystallization synthesis method – solution-
diffusion in the field of ultrasonic vibrations. The ultra-
sonic vibrations system comprising a resilient mem-
brane which simultaneously serves as a lid of the con-
tainer was developed. In the quartz reactor was 
charged gallium, or indium, arsenic, or phosphorus. 
The reactor was evacuated and sealed with a plug of 
quartz thickness of 0.1-0.2 mm. This plug is also served 
to excite ultrasonic vibrations in the reactor. The mem-
brane is joined to a quartz rod derived from the fur-
nace. With this rod ultrasonic vibrations transmitted to 
the reactor from an external source. In the process of 
growing melt treated frequency vibrations from 100 Hz 
to 100 MHz The obtained ingot was cut perpendicular 
to the axis of cultivation plate thickness of 1 mm, 
whose surface was polished by a standard technique. 
The experimental results are shown in Table 3. From 
the presented data it is evident that treatment with 
ultrasonic vibrations causes the melt to improve the 
homogeneity of ingots. The ingots with highest homo-
geneity were obtained at vibration frequency 
4  0,5 MHz 
 
Table 3 – Coefficient of the optical transmission and frequen-
cy of the ultrasonic vibrations 
 
№ 
Frequency of ultra-
sonic vibrations, MHz 
The inhomoge-
neity of coefficient 
opticaltransmis-
sion % 
1 – 9,0 
2 0,001 7,8 
3 0,005 7,7 
4 0,01 7,0 
5 0,1 7,9 
6 1,0 7,4 
7 1,1 7,3 
8 2,0 7,5 
9 3,0 6,8 
10 4,0 6,2 
11 5,0 6,7 
12 6,0 7,1 
13 10,0 7,0 
 
4. CONCLUSIONS 
 
Comparison of the optimum frequency ultrasonic 
vibrations to increase uniformity in the mode of crys-
tals convective transport under the Czochralski method 
and conditions of diffusive transfer indicates a signifi-
cant difference between these frequencies, i.e. charac-
ter determines the transfer conditions of optimization 
process. This fact must be taken into account when 
considering processes for the removal and in the vicini-
ty of the solidification front. 
 
This work was supported by the grant of the Presi-
dent of the Russian Federation № МК-1366.2013.8 
 
 
REFERENCES 
 
1. W.A. Bonner, A.G. Ostrogorsky, Encyclopedia of Materials 
Science and Technology, Second Ed. (2001). 
2. L.V. Kozhitov, V.G. Kosushkin, S.G. Emelyanov, 
S.S. Strel'chenko, Y.N. Parkhomenko, V.V. Kozlov, Scien-
tific publication .Monograph. - South-West University, 2nd 
Ed. Rev. and Corr. (Kursk: 2012). 
3. H. Ooshima, K. Igarashi, H. Iwasa, R. Yamamoto, J. Crys-
tal Growth 373, 2 (2013). 
4. A. Kuznenko, E. Grechushnikov, V. Kharseev, 
M. Dobromyslov, J. Nano- Electron. Phys. 5 No 4, 04026 
(2013). 
5. V. Bashtovoi, A. Reks, S. Klimovich, A. Motsar, 
P. Ryapolov, A. Storozhenko, L. Shalanjva, J. Nano- Elec-
tron. Phys. 5 No 4, 04028 (2013). 
6. V.G. Kosushkin, S.L. Kozhitov, J. Nano- Electron. Phys. 5 
No 4, 04022 (2013). 
7. E.V. Zharikov, J. Crystal Growth 360, 146 (2012). 
8. J.J. Derby, Physics 274 (2005). 
 


Crystal Growth Mechanism in" Synthesis-solute-diffusion" Method in Ultrasonic Field

Electronic Sumy State University Institutional Repository

JOURNAL OF NANO- AND ELECTRONIC PHYSICS ЖУРНАЛ НАНО- ТА ЕЛЕКТРОННОЇ ФІЗИКИ Vol. 6 No 3, 03042(3pp) (2014) Том 6 № 3, 03042(3cc) (2014)   The article was reported at the International Conference «The Advanced Technology, Equipment and Analytical Systems for Materials», Kursk, 13-14 May, 2014 2077-6772/2014/6(3)03042(3) 03042-1  2014 Sumy State University Crystal Growth Mechanism in" Synthesis-solute-diffusion" Method in Ultrasonic Field  V.G. Kosushkin1,*, S.L. Kozhitov2, S.G. Emelyanov3, Yu.N. Parkhomenko2, L.V. Kozhitov2  1 Bauman Moscow State Technical University (Branch in Kaluga), 2, Bazhenov Str., 248000 Kaluga, Russia 2 National University of Science and Technology MISIS, 4, Leninskii Pr., 119049 Moscow, Russia 3 Southwest State University, 94, 50 let Oktyabrya, 305040 Kursk, Russia  (Received 19 May 2014; published online 15 July 2014)  Features crystal growth method “synthesis-solute-diffusion”when applied ultrasonic field are consid-ered. Dependence of the crystal optical transmission heterogeneity frequency ultrasonic vibrations deter-mined. System Tests showed that the optimal vibration frequency that provided a homogeneous crystals and permitting the maintenance of the solidification front in a predetermined position with an accuracy of  5 % frequency is 4 MHz  5. Comparison of the optimum frequency ultrasonic vibrations to increase uni-formity in the mode of crystals convective transport under the Czochralski method and conditions of diffu-sive transfer method indicates a significant difference between these frequencies, i.e. character determines the transfer conditions of optimization process.  Keywords: SSD-method, Ultrasonic vibrations, Homogeneity, Optimization.   PACS numbers: 61.48.De, 81. – b                                                             * kosushkin@gmail.com 1. INTRODUCTION  This method can be attributed to a group of directional solidification in the temperature gradient in the crystalli-zation from solutions in molten metals. The advantage of this group of methods is the possibility to obtain crystals and films AIIIBV compounds at a relatively low tempera-ture and pressure. This method was tested in the prepara-tion of such compounds as single crystals of gallium and indium phosphide (partial pressure of phosphorus vapor at a temperature above the melting point of which is 60 and 30 atmospheres, respectively). The essence of the method is as follows. In a sealed evacuated reactor (Fig. 1) is placed in a crucible loaded with a hitch member and the third group on the bottom of the crucible is placed hinge element of the fifth group    Fig. 1 – Method of " synthesis- solution- diffusion". 1 - reactor, 2 - melt element of the fifth group, 3 - linkage element of the third group  2. EXPERIMENTAL  Reactor sealed in an oven set a temperature distri-bution in which the depth of the melt in the crucible is created by a temperature gradient, and the fifth group element is maintained at a temperature at which its vapor pressure is greater than the dissociation pressure of the compound at a surface temperature of the melt. Evaporating element of the fifth group reacts at the surface of the melt in the crucible with the fifth group element and forms a compound film. This film is dis-solved and the fifth group element is diffused into the lower portion of the crucible where the crystal growth begins. Growth rate is small, but the process takes place in conditions close to equilibrium, which ensures high quality and purity single crystals. You can select the elementary stage of the process: 1. Evaporation of the fifth group element. 2. Reaction on the surface with the metal in crucible and form a compound film. 3. Dissolution of the film in the melt, diffusion of the fifth group element under the action of the temperature gradient. 4. Crystallization of the compound on the bottom of crucible. The rate of dissolution of gallium arsenide gallium melt was first defined by [2]. The analysis of experimental data, that the dissolu-tion rate in the system can be described by the law of Nernst:   effmV S Ct     (1)  where Veff – effective rate of dissolution, m – amount of undissolved material, C – the difference between the real and the liquidus concentration of the solute, t – dissolution time, s – the contact area of gallium and gallium arsenide. Temperature dependence of the effective dissolution rate presented in a logarithmic scale, placed on a straight line, with an apparent activation energy of 25.3  5 kJ∙mol for gallium arsenide. It confirms the exponential dependence of the effective dissolution rate  V.G. KOSUSHKIN, S.L. KOZHITOV, ET AL. J. NANO- ELECTRON. PHYS. 6, 03042 (2014)   03042-2 from temperature. The obtained value of the activation energy coincided with the known data. We have found that the diffusion rate can be deter-mined based on the theory of non-stationary diffusion kinetics. It has been shown that the rate of diffusion depends on the time of the process and can be deter-mined based on the theory of non-stationary diffusion kinetics. In the boundary conditions of limited source diffusion in semi-infinite space, the basic equation of unsteady diffusion kinetics has the form:   20erfc( exp( )2erfck( ))2x k kx tD DDtC Ct xD Dt          (2)  where k – rate constant of diffusion in the interpreta-tion of Frank-Kamenetsky, C – concentration of the reactant. Analysis of the equation (2) shows that the de-scribed process conditions: 1. Diffusion in the boundary of the melt flow equal to the macroscopic reaction rate and which can be found by differentiating the formula (2), is    20 exp erfckkJ kC t DD     (3)  The peculiarity of the problem is that the transition from the kinetic overgrown (initial stage of the process) into the diffusion takes place in time. At the initial time t  0, equation (3) yields: J  k C0, i.e. the reaction proceeds in the kinetic region and its rate is deter-mined by the speed of reaction. If we consider that the second form of the integral will probability decreases with increasing t faster, than e  – t2, so the macroscopic reaction rate decreases with time. In the limit for large t, we obtain:   0DJ Ct  (4)  3. RESULT AND ANALYSES  This process proceeds to the kinetic region of the diffusion. Table 1 shows data for calculating the rate constant of diffusion of arsenic in gallium depending on temperature. Assuming that the crystal grows in the heavy of breakages steps atoms coming from the melt to the interface with further propagation speed monomolecu-lar layer to completely fill in the first place   Table 1– Dependence of the rate of diffusion of arsenic in gallium temperature  1 / Т.103 К k, см.с 0,93 0,0009 0,85 0,0021 0,79 0,0043   2 lnkpakT  (5)  where a is the distance between atoms ,  – energy of one bond between atoms  k – Boltzmann constant,  – saturation associated with supersaturating equality    – 1. As an example, to assess the relative importance of the rate of crystallization in the total rate of the process in terms of the method analyze present payment rate for this stage crystals of indium phosphide. Binding energy  determined based on the heat of solution of phosphorus in molten indium:   142,6 10 /2Herg atN    (6)  Table 2 shows the values of the critical radius of nuclei at different temperatures and supersaturating. An estimate of the rate formation showed that at about a thousand degrees Celsius and 0.4 supersaturat-ing, nucleation rate amounted to 6,5∙106 s – 1. Travel speed step at a thickness of the diffusion layer one hundredth centimeter can be determined from the rela-tionship:   2 0 (ln ) 1V a D Na        (7)  For the conditions above, the tangential speed of growth is 63.7 cm/s. Diffusive nature of the process is also confirmed by experiments to determine the de-pendence of the rate of crystal growth in terms of the temperature of this method. The speed limit of the process rate of diffusion al-lowed using this method for the experimental determi-nation of the diffusion coefficients of the fifth group in the melt element of the third group. Consideration of the kinetic features of diffusion in terms of the method reveals two kinetic region - region decreases (changing) the rate of diffusion and diffusion rate constant region.  Table 2 – Dependence of the critical radius of the nucleus hypothermia at different temperatures  Т /  0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1079 23,5 12,3 6,55 6,66 5,53 4,47 4,22 3,81 3,49 1093 23,1 12,0 8,39 6,54 5,43 4,68 4,05 3,75 3,43 1113 22,7 11,8 8,34 6,42 5,33 4,60 4,07 3,68 3,31 1133 21,9 11,4 7,95 6,20 5,15 4,44 3,94 3,55 3,25 1153 21,5 11,2 7,82 6,10 5,06 4,36 3,87 3,49 3,19 1173 21,5 11,0 7,69 5,99 4,97 4,29 3,80 3,43 3,14 1213 20,4 10,7 7,44 5,80 4,81 4,15 3,68 3,32 3,04     CRYSTAL GROWTH MECHANISM IN SSD-METHOD… J. NANO- ELECTRON. PHYS. 6, 03042 (2014)   03042-3 In the "stationary" stage of the process, when the rate of dissolution and crystallization were agreed, the temperature dependence of the diffusion coefficients was calculated. The results are shown on Fig. 3.    Fig. 2 – Temperature dependence of the diffusion coefficients of phosphorus and arsenic in gallium and indium for the ex-perimentally investigated temperature ranges  Crystallization synthesis method – solution-diffusion in the field of ultrasonic vibrations. The ultra-sonic vibrations system comprising a resilient mem-brane which simultaneously serves as a lid of the con-tainer was developed. In the quartz reactor was charged gallium, or indium, arsenic, or phosphorus. The reactor was evacuated and sealed with a plug of quartz thickness of 0.1-0.2 mm. This plug is also served to excite ultrasonic vibrations in the reactor. The mem-brane is joined to a quartz rod derived from the fur-nace. With this rod ultrasonic vibrations transmitted to the reactor from an external source. In the process of growing melt treated frequency vibrations from 100 Hz to 100 MHz The obtained ingot was cut perpendicular to the axis of cultivation plate thickness of 1 mm, whose surface was polished by a standard technique. The experimental results are shown in Table 3. From the presented data it is evident that treatment with ultrasonic vibrations causes the melt to improve the homogeneity of ingots. The ingots with highest homo-geneity were obtained at vibration frequency 4  0,5 MHz  Table 3 – Coefficient of the optical transmission and frequen-cy of the ultrasonic vibrations  № Frequency of ultra-sonic vibrations, MHz The inhomoge-neity of coefficient opticaltransmis-sion % 1 – 9,0 2 0,001 7,8 3 0,005 7,7 4 0,01 7,0 5 0,1 7,9 6 1,0 7,4 7 1,1 7,3 8 2,0 7,5 9 3,0 6,8 10 4,0 6,2 11 5,0 6,7 12 6,0 7,1 13 10,0 7,0  4. CONCLUSIONS  Comparison of the optimum frequency ultrasonic vibrations to increase uniformity in the mode of crys-tals convective transport under the Czochralski method and conditions of diffusive transfer indicates a signifi-cant difference between these frequencies, i.e. charac-ter determines the transfer conditions of optimization process. This fact must be taken into account when considering processes for the removal and in the vicini-ty of the solidification front.  This work was supported by the grant of the Presi-dent of the Russian Federation № МК-1366.2013.8   REFERENCES  1. W.A. Bonner, A.G. Ostrogorsky, Encyclopedia of Materials Science and Technology, Second Ed. (2001). 2. L.V. Kozhitov, V.G. Kosushkin, S.G. Emelyanov, S.S. Strel'chenko, Y.N. Parkhomenko, V.V. Kozlov, Scien-tific publication .Monograph. - South-West University, 2nd Ed. Rev. and Corr. (Kursk: 2012). 3. H. Ooshima, K. Igarashi, H. Iwasa, R. Yamamoto, J. Crys-tal Growth 373, 2 (2013). 4. A. Kuznenko, E. Grechushnikov, V. Kharseev, M. Dobromyslov, J. Nano- Electron. Phys. 5 No 4, 04026 (2013). 5. V. Bashtovoi, A. Reks, S. Klimovich, A. Motsar, P. Ryapolov, A. Storozhenko, L. Shalanjva, J. Nano- Elec-tron. Phys. 5 No 4, 04028 (2013). 6. V.G. Kosushkin, S.L. Kozhitov, J. Nano- Electron. Phys. 5 No 4, 04022 (2013). 7. E.V. Zharikov, J. Crystal Growth 360, 146 (2012). 8. J.J. Derby, Physics 274 (2005).  

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Crystal Growth Mechanism in" Synthesis-solute-diffusion" Method in Ultrasonic Field

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