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Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
Authors
Bin Lu
Chen Liu
+5Â more
Hongliang Lu
Xiaoran Cui
Yimen Zhang
Yuming Zhang
Zhijun Lv
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'Institute of Electrical and Electronics Engineers (IEEE)'
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Last time updated on 13/01/2021