Resistive random access memory (RRAM) is the most promising candidate for non-volatile memory (NVM) due to its extremely low operation voltage, extremely fast write/erase speed, and excellent scaling capability. However, an obstacle hindering mass production of RRAM is the non-uniform physical mechanism in its resistance switching process. This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions cause a more complete reaction during the reset process, and cause the effective switching gap (dsw) to become thicker. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.
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