Abstract. Gate and drain current noise investigations are performed on nMOS transistors with HfO 2 gate oxides. The drain noise magnitude allows extraction of the slow oxide trap density N t (E F ) ranging from 3 to 7 10 19 eV -1 cm -3 . These values are about 50 times higher than for SiO 2 dielectrics. The 1/f gate current noise component is a quadratic function of the gate leakage current. The gate noise parameter K GC is about 2 10 -17 m 2 , whereas, for SiO 2 dielectrics this gate noise figure of merit is about 10 -19 m 2
