Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs

Abstract

Abstract We have developed a system consisting of a full-3D process simulator for stress calculation and k·p band calculation that takes into account the subband structure. Our simulations are in good agreement with the experimental data of strained Si-pMOSFETs of 65nm technology devices. This system is a powerful tool to optimize device structures with all stress components