"Zero-Undercut" Semi-Additive Copper Patterning -A Breakthrough for Ultrafine-line RDL Lithographic Structures and Precision RF Thinfilm Passives

Abstract

Abstract This paper presents the first demonstration of a "zeroundercut" precision formation of ultrafine-line copper conductor patterns for redistribution layers (RDL) and thin film RF passives. This is accomplished by using a highlyanisotropic and uniform copper plasma-etching process to remove the seed layer with no lateral etching of the copper patterns, unlike what is seen with traditional seed-layer removal by wet-etching. Application of this technical breakthrough for large-area panel processes allows demonstration of precision copper patterns demonstrated, for the first time, on organic laminates with no measurable lateral undercut. Two different plasma chemistries, one pure physical sputter-etching, and the other based upon chemical-physical processes with a hydrogen plasma, were investigated and compared

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