In-situ Sensing using Mass-Spectrometry and its use for Run-to-Run Control on a

Abstract

Abstract. A 300 amu closed-ion-source RGA (Leybold-Inficon Transpector 2) sampling gases directly from the reactor of an ULVAC ERA-1000 cluster tool has been used for real time process monitoring of a W CVD process. The process involves H 2 reduction of WF 6 at a total pressure of 67 Pa (0.5 torr) to produce W films on Si wafers heated at temperatures around 350° C. The normalized RGA signals for the H 2 reagent depletion and the HF product generation were correlated with the W film weight as measured post-process with an electronic microbalance for the establishment of thin-film weight (thickness) metrology. The metrology uncertainty (about 7% for the HF product) was limited primarily by the very low conversion efficiency of the W CVD process (around 2-3%). The HF metrology was then used to drive a robust run-to-run control algorithm, with the deposition time selected as the manipulated (or controlled) variable. For that purpose, during a 10 wafer run, a systematic process drift was introduced as a -5°C processing temperature change for each successive wafer, in an otherwise unchanged process recipe. Without adjustment of the deposition time the W film weight (thickness) would have declined by about 50% by the 10 th wafer. With the aid of the process control algorithm, an adjusted deposition time was computed so as to maintain constant HF sensing signal, resulting in weight (thickness) control comparable to the accuracy of the thickness metrology. These results suggest that in-situ chemical sensing, and particularly mass spectrometry, provide the basis for wafer state metrology as needed to achieve run-to-run control. Furthermore, since the control accuracy was consistent with the metrology accuracy, we anticipate significant improvements for processes as used in manufacturing, where conversion rates are much higher (40-50%) and corresponding signals for metrology will be much larger