Total Dose Dependence of Oxide Charge, Interstrip Capacitance and Breakdown Behavior of sLHC Prototype Silicon Strip Detectors and Test Structures of the SMART Collaboration
Abstract For the future luminosity upgrade proposed for the Large Hadron Collider (LHC) silicon strip detectors (SSD) and test structures were fabricated on various high-resistivity substrates (p-type MCz and FZ, n-type FZ) within the INFN funded SMART project. They were irradiated with 60 Co to test total dose (TID) effects, in order to study the impact of surface radiation damage on the detector properties (interstrip capacitance and resistance, break-down voltage). Selected results from the pre-rad and post-rad characterization of detectors and test structures are presented, in particular interstrip capacitance, breakdown voltage, flatband voltage and oxide charge. They show saturation at about 150 kRad. Annealing are performed both at room and at elevated temperature
