Abstract. We present a process for fabricating THz superconducting circuits on ultra-thin (4um and less) silicon chips. The chips feature gold beam-leads, and are designed to accommodate RF filter structures, and either SIS junctions or hot-electron bolometers as the non-linear circuit element. The beam leads provide electrical connections, thermal contact, and physical support for the chip within a waveguide. Our approach begins by fabricating the superconducting circuit and beam leads atop the device layer of a silicon-on-insulator (SOI) substrate. The chip is then mounted, device side down, atop a quartz carrier wafer. A combination of mechanical lapping and chemical etching removes the handle silicon. Using backside photolithographic alignment through the quartz carrier, a thick photoresist is patterned on the exposed device silicon. The individual chips are then defined in a reactive ion etch of the device silicon, which is terminated after the quartz carrier and gold beam leads are exposed. The combination of superconducting mixers technology and silicon-micromachining techniques promises to open up the THz regime to large format spectroscopic imaging arrays. The potential for such systems are multiple; examples include atmospheric research, astrophysics, and security systems
