Distributed Effects in High Power RF LDMOS Transistors

Abstract

Abstract -This paper focuses on the effects of distributed RF transmission lines on performance aspects, such as, gain, output power, efficiency etc. in high power RF LDMOS amplifiers. The methodology to model and capture the distributed effects will be discussed. Suitable alternatives to mitigate power loss due to distributive effects in large transistors will be presented. Also, the contributions of the package to the overall device performance will be addressed