UCRLJC-125296 PREPRINT Resistance Behavior of Cr-Si-O Thin Films and Chemistry and Physics of Nanostructures and Related Non-Equilibrium Materials RESISTANCE BEHAVIOR OF Cr-Si-O THIN FILMS

Abstract

DISCLAIMER Thin coatings of Cr-Si-O are assessed for use as a resistor. The subrnicron thick films are sputter deposited using a ( l-x)Ar-(x)OZ working gas. Several compacts of metal and oxide powders are commercially prepared for use as the sputter targets. The deposition process yields film compositions which range from 2 to 30 at.% Cr and 20 to 45 at.% Si as measured using Rutherford backscattering. A broad range of resistivities from 10 I to 101AQ cm are found as measured through the fdm thickness between metal pads deposited onto the Cr-Si-O surface. The film structure and morphology are characterized using transmission electron microscopy from which the resistance behavior can be correlated to the distribution of metallic particles. Thermal aging reveals the metastability of the Cr-Si-O film morphology and resistance behavior