SUMMARY A new band-gap reference (BGR) circuit employing sub-threshold current is proposed for low-voltage operations. By employing the fraction of V BE and the sub-threshold current source, the proposed BGR circuit with chip area of 0.029 mm 2 was fabricated in the standard 0.18 m CMOS triple-well technology. It generates reference voltage of 170 mV with power consumption of 2.4 W at supply voltage of 1 V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3 mV for temperatures from −20 to 100 • C, and 1.1 mV per volt for supply voltage from 0.95 to 2.5 V, respectively
