Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity

Abstract

Abstract Terahertz detection capability of an n-type heterojunction interfacial work function internal photoemission (HEIWIP) detector is demonstrated. Threshold frequency, f 0 , of 3.2 THz (93 lm) was obtained by using n-type GaAs emitter doped to 1 · 10 18 cm À3 and Al 0.04 Ga 0.96 As single barrier structure. The detector shows a broad spectral response from 30 to 3.2 THz (10-93 lm) with peak responsivity of 6.5 A/W at 7.1 THz under a forward bias field of 0.7 kV/cm at 6 K. The peak quantum efficiency and peak detectivity are $19$5.5 · 10 8 Jones, respectively under a bias field of 0.7 kV/cm at 6 K. In addition, the detector can be operated up to 25 K