High-voltage diffusion-welded stacks on the basis of SiC Schottky diodes

Abstract

Abstract. In the present work we have considered the prototype of a high-voltage diode stack made on the basis of commercial SiC Schottky diodes. Implementation of vertical integration for four diode chips yielded a stack with a reverse current of 25 µA under a reverse voltage of 6 kV. The capacitance of the stack at zero bias was reduced more than three-fold in comparison with the initial diodes. The reverse recovery time of the stack was 7.4 ns. This paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture