P-I 2 Fundamental relation between local and effective transversefielddependent mobility for electrons in inversion channels

Abstract

Abstract This paper describes a new modeling approach that relates the local mobility to the experimentally determined macroscopic or effective mobility as a function of the vertical electric field. Using the technique of integral representations [ 11 it is possible to find a mathematical condition which any local mobility model has to fulfill to be in accordance with experiment. A local mobility model used in a 2D device simulator has to meet this requirement in order to achieve quantitative agreement between experimental and simulated data. f l Numerical modeling of transport in semiconductor devices is playing an increasingly important role in their development. The mobility is a key quantity for the purpose of modeling. While the low-and high field behavior of the mobility in bulk Si is relatively well understood The microscopic details are not available. Very useful models for the local mobility have been proposed by parameterizing the model by an effective field Eeff. However, they are in most cases using for the local model the one of the external average mobilty peff. In 2D device simulators the current at each node in the MOS inversion layer is calculated using the local transverse field Eeff parameters for a chosen mobility model. It was noted in Because the peff is defined for Long channels, one can use a linear model for the potential v. Secondly, a transformation from the independent variable 'x' to the vertical field is possible through the relation 10