Effect of substrate temperature on the magnetic tunnel junction material etching using inductively coupled CH 3 OH plasma

Abstract

It is very challenging to develop reactive ion etching of the magnetic tunnel junction (MTJ) in STT-MRAM due to the non-volatility of etching byproduct. Furthermore, the conventional reactive ion etching using chlorine based chemistry shows corrosion after MTJ etching. To avoid this corrosion, non-corrosive gases such as CO/ NH 3 and CH 3 OH were introduced in MTJ etch recently