In the present study we use x-ray di raction methods to characterize the surface of Si wafers irradiated with nitrogen by Plasma Immersion Ion Implantation. This is a non-line-of-sight ion implantation method, which allows three-dimensional treatment of materials including semiconductors, metals and dielectrics. The atomic concentration pro les in the implanted Si wafers were measured by Auger electron spectroscopy. The 004 Si rocking curve !-scan was measured in a high resolution x-ray di ractometer equipped with a Ge220 four-crystal monochromator before and after implantation. A distortion of the Si 004-rocking curve w as clearly observed for the as-implanted sample. This rocking curve w as successfully simulated by dynamical theory of x-ray di raction, assuming a Gaussian strain pro le through the implanted region. The analysis made by x-ray di raction and Auger electron spectroscopy revealed successful implantation of ions with accumulated nitrogen dose of 1:510 17 cm ,3 . The Siwafers can be used as high sensitivity monitors in the Plasma Immersion Ion Implantation process, especially at the low dose range. I Introduction Plasma Immersion Ion Implantation PIII is a novel ion implantation technique developed recently for the improvement of the surface properties of materials including semiconductors, metals and dielectrics 1 . It is inherently a non-line-of-sight ion implantation method which allows three-dimensional surface treatment o f manufactured workpieces of large dimension and or complex shapes, at high speed, in batch processing mode and in a cost-e ective manner 2 . In PIII, the ions of interest are extracted directly from the plasma in which the samples to be processed are immersed, without the need of acceleration grids. In this work, Siwafers were implanted with nitrogen using the PIII technique. The wafers were characterized by Auger Electron Spectroscopy AES in order to determine the concentration pro les. The samples were analyzed by high-resolution x-ray di raction before and after implantation. The pro les of the Si 004 rocking curves were simulated by dynamical theory of x-ray di raction and compared with the measured data. II Plasma Immersion Ion Implantation Syste
