General development of a new hall effect sensor

Abstract

Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by mechanical stress in the device. The offset can be reduced with a factor 103 to 105 when the spinning - current principle is applied. This paper presents a structure of a new Hall effect sensor which uses a novel offset reduction method and the function which governs the changes in the electric field inside the new Hall effect sensor in presence of magnetic field. This function helps us to control in MatLab environment the equipotential lines and to monitor the changes when biasing conditions are change. The combination of his form and the elaborate sequence of using dynamic spinning current technique, can lead to satisfactory results of produced Hall voltage with small noise in a presence of external magnetic field. © 2011 IFSA