Filtering of matter wave vibrational states via spatial adiabatic passage

We discuss the filtering of the vibrational states of a cold atom in an optical trap, by chaining this trap with two empty ones and controlling adiabatically the tunneling. Matter wave filtering is performed by selectively transferring the population of the highest populated vibrational state to the most distant trap while the population of the rest of the states remains in the initial trap. Analytical conditions for two-state filtering are derived and then applied to an arbitrary number of populated bound states. Realistic numerical simulations close to state-of-the-art experimental arrangements are performed by modeling the triple well with time dependent P\"oschl-Teller potentials. In addition to filtering of vibrational states, we discuss applications for quantum tomography of the initial population distribution and engineering of atomic Fock states that, eventually, could be used for tunneling assisted evaporative cooling.Comment: 7 pages, 6 figure

Localized and extended states in a disordered trap

We study Anderson localization in a disordered potential combined with an inhomogeneous trap. We show that the spectrum displays both localized and extended states, which coexist at intermediate energies. In the region of coexistence, we find that the extended states result from confinement by the trap and are weakly affected by the disorder. Conversely, the localized states correspond to eigenstates of the disordered potential, which are only affected by the trap via an inhomogeneous energy shift. These results are relevant to disordered quantum gases and we propose a realistic scheme to observe the coexistence of localized and extended states in these systems.Comment: Published versio

Dipole trap model for the metallic state in gated silicon-inversion layers

In order to investigate the metallic state in high-mobility Si-MOS structures, we have further developed and precised the dipole trap model which was originally proposed by B.L. Altshuler and D.L. Maslov [Phys. Rev. Lett.\ 82, 145 (1999)]. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. It turns out that a pronounced metallic state can be caused by such trap states at appropriate energies whose behavior is in good agreement with experimental observations.Comment: 16 pages, 10 figures, submitte

Density of bulk trap states in organic semiconductor crystals: discrete levels induced by oxygen in rubrene

The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscopy (TD-SCLC). This spectroscopy has been applied to study bulk rubrene single crystals, which are shown by this technique to be of high chemical and structural quality. A density of deep trap states as low as ~ 10^{15} cm^{-3} is measured in the purest crystals, and the exponentially varying shallow trap density near the band edge could be identified (1 decade in the density of states per ~25 meV). Furthermore, we have induced and spectroscopically identified an oxygen related sharp hole bulk trap state at 0.27 eV above the valence band.Comment: published in Phys. Rev. B, high quality figures: http://www.cpfs.mpg.de/~krellner

Multiscale quantum-defect theory for two interacting atoms in a symmetric harmonic trap

We present a multiscale quantum-defect theory (QDT) for two identical atoms in a symmetric harmonic trap that combines the quantum-defect theory for the van der Waals interaction [B. Gao, Phys. Rev. A \textbf{64}, 010701(R) (2001)] at short distances with a quantum-defect theory for the harmonic trapping potential at large distances. The theory provides a systematic understanding of two atoms in a trap, from deeply bound molecular states and states of different partial waves, to highly excited trap states. It shows, e.g., that a strong $p$ wave pairing can lead to a lower energy state around the threshold than a $s$ wave pairing.Comment: 10 pages, 6 figure

Trap-assisted space charge limited transport in short channel MoS2 transistor

We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited at high $V_{DS}$ and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage ($V_c$) was also determined. The density of trap states was quantitatively calculated from $V_c$. The possible origin of exponential trap distribution in these devices is also discussed.Comment: 5 pages, 3 figure

Characterization of trap states in perovskite films by simultaneous fitting of steady-state and transient photoluminescence measurements

Understanding carrier recombination mechanisms and quantifying recombination dynamics are key to improving the performance of state-of-the-art perovskite solar cells. Here we present method to quantify the quality of perovskite thin films using a combination of steady-state and transient photoluminescence measurements. The combined experimental data sets are fitted using a single, general recombination model, from which detailed trap and recombination parameters can be extracted, and the accuracy of the fitted values estimated. This approach expands the application of photoluminescence measurements to include quantitative evaluation of the most relevant defect characteristics, including trap density, energy level and carrier capture coefficients. We apply this approach to compare perovskite films of the widely-studied methyl-ammonium lead iodide (MAPbI3) with the high performance quadruple-cation, mixed-halide composition Cs0.07Rb0.03(FA0.85MA0.15)0.9Pb(I0.85Br0.15)3. Our quantitative analysis of trap properties in these perovskite films suggests that the superior performance of the quadruple cation films may be due to a greatly reduced electron capture coefficient, rather than a significant reduction in the trap density.Australian Renewable Energy Agenc