Evaporation of buffer gas-thermalized anions out of a multipole rf ion trap

We identify plain evaporation of ions as the fundamental loss mechanism out of a multipole ion trap. Using thermalized negative Cl- ions we find that the evaporative loss rate is proportional to a Boltzmann factor. This thermodynamic description sheds new light on the dynamics of particles in time-varying confining potentials. It specifically allows us to extract the effective depth of the ion trap as the activation energy for evaporation. As a function of the rf amplitude we find two distinct regimes related to the stability of motion of the trapped ions. For low amplitudes the entire trap allows for stable motion and the trap depth increases with the rf field. For larger rf amplitudes, however, rapid energy transfer from the field to the ion motion can occur at large trap radii, which leads to a reduction of the effective trapping volume. In this regime the trap depth decreases again with increasing rf amplitude. We give an analytical parameterization of the trap depth for various multipole traps that allows predictions of the most favorable trapping conditions.Comment: Phys. Rev. Lett., in pres

Efficient Direct Evaporative Cooling in an Atom Chip Magnetic Trap

We demonstrate direct evaporative cooling of $^{87}$Rb atoms confined in a dimple trap produced by an atom chip. By changing the two chip currents and two external bias fields, we show theoretically that the trap depth can be lowered in a controlled way with no change in the trap frequencies or the value of the field at the trap center. Experimentally, we maximized the decrease in trap depth by allowing some loosening of the trap. In total, we reduced the trap depth by a factor of 20. The geometric mean of the trap frequencies was reduced by less than a factor of 6. The measured phase space density in the final two stages increased by more than two orders of magnitude, and we estimate an increase of four orders of magnitude over the entire sequence. A subsequent rf evaporative sweep of only a few megahertz produced Bose-Einstein condensates. We also produce condensates in which raising the trap bottom pushes hotter atoms into an rf "knife" operating at a fixed frequency of 5\,MHz.Comment: 5 pages, 3 figure

Charge trapping and detrapping in polymeric materials: Trapping parameters

Space charge formation in polymeric materials can cause some serious concern for design engineers as the electric field may severely be distorted, leading to part of the material being overstressed. This may result in material degradation and possibly premature failure at the worst. It is therefore important to understand charge generation, trapping, and detrapping processes in the material. Trap depths and density of trapping states in materials are important as they are potentially related to microstructure of the material. Changes in these parameters may reflect the aging taken place in the material. In the present paper, characteristics of charge trapping and detrapping in low density polyethylene (LDPE) under dc electric field have been investigated using the pulsed electroacoustic (PEA) technique. A simple trapping and detrapping model based on two trapping levels has been used to qualitatively explain the observation. Numerical simulation based on the above model has been carried out to extract parameters related to trapping characteristics in the material. It has been found that the space charge decaying during the first few hundred seconds corresponding to the fast changing part of the slope was trapped with the shallow trap depth 0.88 eV, with trap density 1.47 × 1020 m-3 in the sample volume measured. At the same time, the space charge that decays at longer time corresponding to the slower part of the slope was trapped with the deep trap depth 1.01 eV, with its trap density 3.54 × 1018 m-3. The results also indicate that trap depths and density of both shallow and deep traps may be used as aging markers as changes in the material will certainly affect trapping characteristics in terms of trap depth and density

Strongly interacting one-dimensional bosons in arbitrary-strength optical lattices: from Bose-Hubbard to sine-Gordon and beyond

We analyze interacting one-dimensional bosons in the continuum, subject to a periodic sinusoidal potential of arbitrary depth. Variation of the lattice depth tunes the system from the Bose-Hubbard limit for deep lattices, through the sine-Gordon regime of weak lattices, to the complete absence of a lattice. Using the Bose-Fermi mapping between strongly interacting bosons and weakly interacting fermions, we derive the phase diagram in the parameter space of lattice depth and chemical potential. This extends previous knowledge from tight-binding (Bose-Hubbard) studies in a new direction which is important because the lattice depth is a readily adjustable experimental parameter. Several other results (equations of state, energy gaps, profiles in harmonic trap) are presented as corollaries to the physics contained in this phase diagram. Generically, both incompressible (gapped) and compressible phases coexist in a trap; this has implications for experimental measurements

Electron impact ionization loading of a surface electrode ion trap

We demonstrate a method for loading surface electrode ion traps by electron impact ionization. The method relies on the property of surface electrode geometries that the trap depth can be increased at the cost of more micromotion. By introducing a buffer gas, we can counteract the rf heating assocated with the micromotion and benefit from the larger trap depth. After an initial loading of the trap, standard compensation techniques can be used to cancel the stray fields resulting from charged dielectric and allow for the loading of the trap at ultra-high vacuum.Comment: 4 pages, 5 eps figures. Shift in focus, minor correction

Experimental investigation of planar ion traps

Chiaverini et al. [Quant. Inf. Comput. 5, 419 (2005)] recently suggested a linear Paul trap geometry for ion trap quantum computation that places all of the electrodes in a plane. Such planar ion traps are compatible with modern semiconductor fabrication techniques and can be scaled to make compact, many zone traps. In this paper we present an experimental realization of planar ion traps using electrodes on a printed circuit board to trap linear chains of tens of 0.44 micron diameter charged particles in a vacuum of 15 Pa (0.1 torr). With these traps we address concerns about the low trap depth of planar ion traps and develop control electrode layouts for moving ions between trap zones without facing some of the technical difficulties involved in an atomic ion trap experiment. Specifically, we use a trap with 36 zones (77 electrodes) arranged in a cross to demonstrate loading from a traditional four rod linear Paul trap, linear ion movement, splitting and joining of ion chains, and movement of ions through intersections. We further propose an additional DC biased electrode above the trap which increases the trap depth dramatically, and a novel planar ion trap geometry that generates a two dimensional lattice of point Paul traps.Comment: 11 pages, 20 figure