Probing viscoelastic properties of a thin polymer film sheared between a beads layer and quartz crystal resonator

We report measurements of viscoelastic properties of thin polymer films of 10-100 nm at the MHz range. These thin films are confined between a quartz crystal resonator and a millimetric bead layer, producing an increase of both resonance frequency and dissipation of the quartz resonator. The shear modulus and dynamic viscosity of thin films extracted from these measurements are consistent with the bulk values of the polymer. This modified quartz resonator provides an easily realizable and effective tool for probing the rheological properties of thin films at ambient environment.Comment: submitted to ap

Molecular recognition on acoustic wave devices

Microporous thin films composed either of zeolite crystals embedded in sol-gel derived glass or of a molecular coupling layer, zeolite crystals and a porous silica overlayer, were formed on the gold electrodes of Quartz Crystal Microbalances (QCM). The microporosity of the thin films was characterized by in situ nitrogen and vapor sorption isotherms. Both preparation methods result in thin films with substantial microporosity. Selective adsorption based on molecular size exclusion from the microporous films could be achieved

Synthesis and characterization of bulk and thin film antimony-selenium phase change alloys

Phase change alloys have recently gained increasing attention due to their application in developing phase change random memory (PRAM) devices, as Flash memory based devices are rapidly approaching their technological limitations. The most dominant features of PRAM devices are its non-volatile nature, compatible with present day IC\u27s manufacturing process, high density, fast operation, low power consumption etc; Devices built on binary alloys such as Antimony - Selenium (SbSe) exhibit certain superior properties such as fast operation, reduced power consumption, economical etc. compared to that of ternary alloy (GST). In order to understand this behavior in detail, bulk SbxSe 100-x (40 ≤ x ≤ 70) alloys are synthesized and deposited as thin films on silicon (100) plane substrate. Series of experiments such as X-ray diffraction analysis (XRD), Energy dispersive X-ray diffraction (EDAX), Spectroscopic Ellipsometer, Hall test experiments are carried out to characterize both the bulk and thin films. EDAX experiments show the deviation between bulk and thin films compositions is less than 10%. Diffraction patterns of bulk exhibit orthorhombic structure, i.e., Sb2Se3 type where as thin films demonstrate amorphous behavior. Impact of annealing on thin films is studied by heating the films to 170°C under argon (Ar) ambience. Post annealing results of Sb40Se60 thin films show the crystal structure is orthorhombic and crystallization temperature (Tc) increases with increase in Sb content of the compound. Ellipsometry and Hall measurements of annealed films exhibit high refractive index (n), low extinction coefficient (k) and high carrier concentration with associated low carrier mobility. Further the conductivity of annealed Sb40Se60 thin films switches from p to n type

The structural and electrical properties of thermally grown TiO2 thin films

We studied the structural and electrical properties of TiO2 thin films grown by thermal oxidation of e-beam evaporated Ti layers on Si substrates. Time of flight secondary ion mass spectroscopy (TOF-SIMS) was used to analyse the interfacial and chemical composition of the TiO2 thin films. Metal oxide semiconductor (MOS) capacitors with Pt or Al as the top electrode were fabricated to analyse electrical properties of the TiO2 thin films. We show that the reactivity of the Al top contact affects electrical properties of the oxide layers. The current transport mechanism in the TiO2 thin films is shown to be Poole–Frenkel (P–F) emission at room temperature. At 84 K, Fowler– Nordheim (F–N) tunnelling and trap-assisted tunnelling are observed. By comparing the electrical characteristics of thermally grown TiO2 thin films with the properties of those grown by other techniques reported in the literature, we suggest that, irrespective of the deposition technique, annealing of as-deposited TiO2 in O2 is a similar process to thermal oxidation of Ti thin films

Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices

Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents, were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD) technique. The Al2O3-BST films was demosnstrated to be a suitable systems to fabricate ferroelectric thin films with low dielectric loss and higher figure of merit for tunable microwave devices. Pure BST thin films were also fabricated for comparison purpose. The films' structure and morphology were analyzed by X-ray diffractiopn and scanning electron microscopy, respectively; nad showed that the surface roughness for the Al2O3-BST films increased with the Al2O3 content. Apart from that, the broadening in the intensity peak in XRD result indicating the grain size of the Al2O3-BST films reduced with the increasing of Al2O3 dopant. We measured the dielctric properties of Al2O3-BST films with a home-made non-destructive dual resonator method at frequency ~ 7.7 GHZ. The effect of doped Al2O3 into BST thin films significantly reduced the dielectric constant, dielectric loss and tunability compare to pure BST thin film. Our result shows the figure of merit (K), used to compare the films with varied dielectric properties, increased with the Al2O3 content. Therefore Al2O3-BST films show the potential to be exploited in tunable microwave devices.Comment: 8 pages, 4 figures, 1 table. Accepted & tentatively for Feb 15 2004 issue, Journal of Applied Physic

Giant perpendicular magnetic anisotropy energies in CoPt thin films: Impact of reduced dimensionality and imperfections

The impact of reduced dimensionality on the magnetic properties of the tetragonal L1$_{0}$ CoPt alloy is investigated from ab-initio considering several kinds of surface defects. By exploring the dependence of the magnetocrystalline anisotropy energy (MAE) on the thickness of CoPt thin films, we demonstrate the crucial role of the chemical nature of the surface. For instance, Pt-terminated thin films exhibit huge MAEs which can be 1000% larger than those of Co-terminated films. Besides the perfect thin films, we scrutinize the effect of defective surfaces such as stacking faults or anti-sites on the surface layers. Both types of defects reduce considerably the MAE with respect to the one obtained for Pt-terminated thin films. A detailed analysis of the electronic structure of the thin films is provided with a careful comparison to the CoPt bulk case. The behavior of the MAEs is then related to the location of the different virtual bound states utilising second order perturbation theory.Comment: 10 pages, 7 figures, accepted in Journal of Physics: Condensed Matte

A route to room temperature ferromagnetic ultrathin SrRuO3_3 films

Experimental efforts to stabilize ferromagnetism in ultrathin films of transition metal oxides have so far failed, despite expectations based on density functional theory (DFT) and DFT+U. Here, we investigate one of the most promising materials, SrRuO$_3$, and include correlation effects beyond DFT by means of dynamical mean field theory. In agreement with experiment we find an intrinsic thickness limitation for metallic ferromagnetism in SrRuO$_3$ thin films. Indeed, we demonstrate that the realization of ultrathin ferromagnetic films is out of reach of standard thin-film techniques. Proposing charge carrier doping as a new route to manipulate thin films, we predict room temperature ferromagnetism in electron-doped SrRuO$_3$ ultra thin films.Comment: 5 pages, 3 figure