Synthesis of large-area and aligned copper oxide nanowires from copper thin film on silicon substrate

Large-area and aligned copper oxide nanowires have been synthesized by thermal annealing of copper thin films deposited onto silicon substrate. The effects of the film deposition method, annealing temperature, film thickness, annealing gas, and patterning by photolithography are systematically investigated. Long and aligned nanowires can only be formed within a narrow temperature range from 400 to 500°C. Electroplated copper film is favourable for the nanowire growth, compared to that deposited by thermal evaporation. Annealing copper thin film in static air produces large-area, uniform, but not well vertically aligned nanowires along the thin film surface. Annealing copper thin film under a N2/O2 gas flow generates vertically aligned, but not very uniform nanowires on large areas. Patterning copper thin film by photolithography helps to synthesize large-area, uniform, and vertically aligned nanowires along the film surface. The copper thin film is converted into bicrystal CuO nanowires, Cu2O film, and also perhaps some CuO film after the thermal treatment in static air. Only CuO in the form of bicrystal nanowires and thin film is observed after the copper thin film is annealed under a N2/O2 gas flow

Increased Cycling Efficiency and Rate Capability of Copper-coated Silicon Anodes in Lithium-ion Batteries

Cycling efficiency and rate capability of porous copper-coated, amorphous silicon thin-film negative electrodes are compared to equivalent silicon thin-film electrodes in lithium-ion batteries. The presence of a copper layer coated on the active material plays a beneficial role in increasing the cycling efficiency and the rate capability of silicon thin-film electrodes. Between 3C and C/8 discharge rates, the available cell energy decreased by 8% and 18% for 40 nm copper-coated silicon and equivalent silicon thin-film electrodes, respectively. Copper-coated silicon thin-film electrodes also show higher cycling efficiency, resulting in lower capacity fade, than equivalent silicon thin-film electrodes. We believe that copper appears to act as a glue that binds the electrode together and prevents the electronic isolation of silicon particles, thereby decreasing capacity loss. Rate capability decreases significantly at higher copper-coating thicknesses as the silicon active-material is not accessed, suggesting that the thickness and porosity of the copper coating need to be optimized for enhanced capacity retention and rate capability in this system.Comment: 15 pages, 6 figure

Thin film gauge

A thin film gauge for use in measuring distributed convective heat transfer rates occurring along given surfaces, is described. The gauge is particularly suited to measuring test surfaces in the air stream of a wind tunnel. The gauge is characterized by a plurality of painted platinum leads extend across the surface of a substrate; a pair of leads on the surface is adapted to deliver an electric current at a constant amperage through a selected thermally active area. Leads are also coupled at opposite sides of the thermally active area for detecting induced voltage drops occurring in the area so that the active length of the gauge is defined between voltage output leads. Changes in heat transfer to the thermally active area are isolated and determined by detecting induces changes in voltage drop

Synthesis of thin-film black phosphorus on a flexible substrate

We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion to BP in a high-pressure multi-anvil cell at room temperature. Raman spectroscopy and transmission electron microscopy measurements confirmed the formation of a nano-crystalline BP thin-film with a thickness of around 40 nm. Optical characterization indicates a bandgap of around 0.28 eV in the converted BP, similar to the bandgap measured in exfoliated thin-films. Thin-film BP transistors exhibit a field-effect mobility of around 0.5 cm2/Vs, which can probably be further enhanced by the optimization of the conversion process at elevated temperatures. Our work opens the avenue for the future demonstration of large-scale, high quality thin-film black phosphorus

Nanostructured titanium dioxide thin film for dye-sensitized Solar cell applications

Nanostructured Titanium Dioxide (TiC^) thin film for Dye-Sensitized Solid State Solar Cell (DSSSC) application has been synthesized using sol-gel method and deposited onto silicon and glass substrates using spin coating technique. The optimized annealing temperature and sol-gel concentration were obtained a| 500°C and 0.2M, respectively. Basically, there were four properties studied; surface morphology, structural, electrical and optical properties. Field Emission Scanning Electron Microscopy (FE-SEM) / Scanning Electron microscopy (SEM) were carried out to observe the changes in surface morphology whenever there are changes on the parameters. X-Ray Diffractions (XRD) characterization of the samples was taken to examine the TiC>2 crystalline phases and the intensity of nanocrystalline particles in the thin film. I-V measurement using two-point probe equipment was used to observe the electrical properties which include the measuring of the sheet resistance, the resistivity and the conductivity of the TiC>2 thin film. The optical properties were observed using UV-Vis-NIR spectrophotometer. The thin film transmittance and the band gap energy were also observed using this spectrophotometer. At the end of this research, uniform and homogeneous TiC>2 thin film has successfully prepared. By controlling the sol-gel concentration, a transparent TiC>2 thin film has been developed which has high transmittance property of above 80%. The TiC>2 thin films which were annealed at a temperature of 500°C and prepared at 0.2M of sol-gel precursor concentration gave the optimum results. By adding TiC>2 nanopowder, the surface area and porosity of TiC>2 thin film is improved, thus good candidate to use in DSSSC application

Electrical phase change of CVD-grown Ge-Sb-Te thin film device

A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780 °C and substrate temperature 250 °C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film has been characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The CVD-grown Ge-Sb-Te thin film shows promise for the phase change memory applications

Kinetically-controlled thin-film growth of layered β\beta- and γ−\gamma-Nax_{x}CoO2_{2} cobaltate

We report growth characteristics of epitaxial $\beta$-Na$_{0.6}$CoO$_{2}$ and $\gamma$-Na$_{0.7}$CoO$_{2}$ thin films on (001) sapphire substrates grown by pulsed-laser deposition. Reduction of deposition rate could change structure of Na$_{x}$CoO$_{2}$ thin film from $\beta$-phase with island growth mode to $\gamma$-phase with layer-by-layer growth mode. The $\gamma$-Na$_{0.7}$CoO$_{2}$ thin film exhibits spiral surface growth with multiterraced islands and highly crystallized texture compared to that of the $\beta$-Na$_{0.6}$CoO$_{2}$ thin film. This heterogeneous epitaxial film growth can give opportunity of strain effect of physical properties and growth dynamics of Na$_{x}$CoO$_{2}$ as well as subtle nature of structural change.Comment: accepted for publication in Applied Physics Letter

Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric.

Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ∼30 cm(2) V(-1) s(-1), on/off ratio of 10(3)-10(4), switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays

A universal platform for magnetostriction measurements in thin films

We present a universal nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly-clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetostrictive stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g. by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. We use this method to determine the magnetostriction constants of a 10nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique can be useful in particular for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by e.g. electron beam deposition, thermal evaporation or sputtering

Thin Film Superconducting Devices

Techniques have been developed with which it is possible to fabricate superconducting thin film structures (“bridges”) which show Josephson-like phenomena, with a wide variety of electrical and superconducting parameters. These bridges—based on the proximity effect—are made in layered thin film substrates which have been fabricated from many different, both hard and soft, superconducting materials. The fabrication techniques and the electrical and superconducting characteristics for these proximity effect bridges including a simple low frequency (≤10 GHz) equivalent circuit will be discussed. These bridges have been incorporated into simple thin film circuits for use as galvanometers, magnetometers, gradiometers, detector arrays, etc. Extension of these techniques to more complex superconducting thin film bridge circuits including resistors, capacitors, and inductors will be indicated