Temperature Dependence of the Index of Refraction of Fused Silica

In order to explain the positive temperature coefficient of the visible index of refraction of fused silica I develop a simple model which assumes a single ultraviolet resonance. Assuming thermal broadening and using the Kramers- Kronig relations leads to a temperature coefficient in qualitative, but not quantitative, agreement with measurement.Comment: 3 pp, tex, Answer to Question # 50 in Am. J. Phy

Electrostatically-Driven Resonator on Soi with Improved Temperature Stability

This paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/degrees C, preliminary measurements on non-optimised structures gave evidence of a temperature coefficient of 29 ppm/degrees C. Design, optimisation, experimental results with post process simulation and prospective work are presented.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Beryllium thin films for resistor applications

Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance

AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage

The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the dark current decreases rapidly with reducing temperature while avalanche gain exhibits a weak temperature dependence. No measurable band to band tunneling current was observed in the thinner diodes at an electric field of 1.07 MV/cm, corresponding to a bias of 95% of the breakdown voltage. Temperature coefficients of breakdown voltage of 0.95 and 1.47 mV/K were obtained from 80 and 230 nm diodes, respectively. These are significantly lower than a range of semiconductor materials with similar avalanche region widths. Our results demonstrated the potential of using thin AlAsSb avalanche regions to achieve low temperature coefficient of breakdown voltage without suffering from high band to band tunneling current

Marangoni flow in freely suspended liquid films

We demonstrate controlled material transport driven by temperature gradients in thin freely suspended smectic films. The films with submicrometer thicknesses and lateral extensions of several millimeters were studied in microgravity during suborbital rocket flights. In-plane temperature gradients cause two specific Marangoni effects, directed flow and convection patterns. At low gradients, practically thresholdless, flow transports material with a normal (negative) temperature coefficient of the surface tension, $d\sigma/dT<0$, from the hot to the cold film edge. That material accumulates at the cold film border. In materials with positive temperature coefficient, $d\sigma/dT>0$, the reverse transport from the cold to the hot edge is observed. We present a model that describes the effect quantitatively.Comment: 5 pages, 5 figure