Electric-field switchable magnetization via the Dzyaloshinskii-Moriya interaction: FeTiO_3 versus BiFeO_3

In this article we review and discuss a mechanism for coupling between electric polarization and magnetization that can ultimately lead to electric-field switchable magnetization. The basic idea is that a ferroelectric distortion in an antiferromagnetic material can "switch on" the Dzyaloshinskii-Moriya interaction which leads to a canting of the antiferromagnetic sublattice magnetizations, and thus to a net magnetization. This magnetization M is coupled to the polarization P via a trilinear free energy contribution of the form P(M x L), where L is the antiferromagnetic order parameter. In particular, we discuss why such an invariant is present in R3c FeTiO_3 but not in the isostructural multiferroic BiFeO_3. Finally, we construct symmetry groups that in general allow for this kind of ferroelectrically-induced weak ferromagnetism.Comment: 15 pages, 3 images, to appear in J. Phys: Condens. Matter Focus Issue on Multiferroic

Strain Induced Ferroelectric Topological Insulator

The simultaneous presence of seemingly incompatible properties of solids often provides a unique opportunity to address questions of fundamental and practical importance. The coexistence of ferroelectric and topological orders is one such example. Ferroelectrics, which have a spontaneous macroscopic polarization switchable by an applied electric field, usually are semiconductors with a well-developed wide band gap with a few exceptions. On the other hand, time-reversal symmetric $Z_2$ topological insulators (TI), characterized by robust metallic surface states protected by the topology of the bulk, usually are narrow-gap semiconductors ($< 0.7$ eV) which allow band inversion induced by the spin-orbit interaction. To date, a ferroelectric topological insulator (FETI) has remained elusive, owing to the seemingly contradictory characters of the ferroelectric and topological orders. Here, we report that the FETI can be realized in halide perovskite CsPbI$_3$ under strain. Our first-principles study reveals that a non-centrosymmetric ferroelectric structure of CsPbI$_3$ is energetically favored under a wide range of pressures, while maintaining its topological order. The proposed FETI is characterized by switchable polar surfaces with spin-momentum locked Dirac cones, which allows for electric-field control of topological surface states (TSSs) and the surface spin current. Our demonstration of a FETI in a feasible material opens doors for future studies combining ferroelectric and topological orders, and offers a new paradigm for diverse applications in electronics, spintronics, and quantum information

High density array of epitaxial BiFeO3 nanodots with robust and reversibly switchable topological domain states

The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for such applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high density arrays of epitaxial BiFeO3 (BFO) nanodots with lateral size as small as ~60 nm. We demonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time yet can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These result demonstrated that these reversibly switchable topological domain arrays are promising for applications in high density nanoferroelectric devices such as nonvolatile memoriesComment: 5 figures, 18 pages, plus supplementary material

Nano-electromechanical switchable photonic metamaterials

We introduce mechanically reconfigurable electrostatically-driven photonic metamaterials (RPMs) as a generic platform for large-range tuning and switching of photonic metamaterial properties. Here we illustrate this concept with a high-contrast metamaterial electro-optic switch exhibiting relative reflection changes of up to 72% in the optical part of the spectrum

Plasmonic color filters as dual-state nanopixels for high-density microimage encoding

Plasmonic color filtering has provided a range of new techniques for “printing” images at resolutions beyond the diffraction-limit, significantly improving upon what can be achieved using traditional, dye-based filtering methods. Here, a new approach to high-density data encoding is demonstrated using full color, dual-state plasmonic nanopixels, doubling the amount of information that can be stored in a unit-area. This technique is used to encode two data sets into a single set of pixels for the first time, generating vivid, near-full sRGB (standard Red Green Blue color space)color images and codes with polarization-switchable information states. Using a standard optical microscope, the smallest “unit” that can be read relates to 2 × 2 nanopixels (370 nm × 370 nm). As a result, dual-state nanopixels may prove significant for long-term, high-resolution optical image encoding, and counterfeit-prevention measures