35,317 research outputs found

    O adsorption and incipient oxidation of the Mg(0001) surface

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    First principles density functional calculations are used to study the early oxidation stages of the Mg(0001) surface for oxygen coverages 1/16 <= Theta <= 3 monolayers. It is found that at very low coverages O is incorporated below the topmost Mg layer in tetrahedral sites. At higher oxygen-load the binding in on-surface sites is increased but at one monolayer coverage the on-surface binding is still about 60 meV weaker than for subsurface sites. The subsurface octahedral sites are found to be unfavorable compared to subsurface tetrahedral sites and to on-surface sites. At higher coverages oxygen adsorbs both under the surface and up. Our calculations predict island formation and clustering of incorporated and adsorbed oxygen in agreement with previous calculations. The calculated configurations are compared with the angle-scanned x-ray photoelectron diffraction experiment to determine the geometrical structure of the oxidized Mg(0001) surface.Comment: 10 pages, 5 figure

    Insights on finite size effects in Ab-initio study of CO adsorption and dissociation on Fe 110 surface

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    Adsorption and dissociation of hydrocarbons on metallic surfaces represent crucial steps to carburization of metal. Here, we use density functional theory total energy calculations with the climbing-image nudged elastic band method to estimate the adsorption energies and dissociation barriers for different CO coverages with surface supercells of different sizes. For the absorption of CO, the contribution from van der Waals interaction in the computation of adsorption parameters is found important in small systems with high CO-coverages. The dissociation process involves carbon insertion into the Fe surface causing a lattice deformation that requires a larger surface system for unrestricted relaxation. We show that, in larger surface systems associated with dilute CO-coverages, the dissociation barrier is significantly decreased. The elastic deformation of the surface is generic and can potentially applicable for all similar metal-hydrocarbon reactions and therefore a dilute coverage is necessary for the simulation of these reactions as isolated processes.Comment: 12 pages, 6 figures. Submitted to Journal of Applied Physic

    Ab initio study of the interface properties of Fe/GaAs(110)

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    We have investigated the initial growth of Fe on GaAs(110) by means of density functional theory. In contrast to the conventionally used (001)-surface the (110)-surface does not reconstruct. Therefore, a flat interface and small diffusion can be expected, which makes Fe/GaAs(110) a possible candidate for spintronic applications. Since experimentally, the actual quality of the interface seems to depend on the growth conditions, e.g., on the flux rate, we simulate the effect of different flux rates by different Fe coverages of the semiconductor surface. Systems with low coverages are highly diffusive. With increasing amount of Fe, i.e., higher flux rates, a flat interface becomes more stable. The magnetic structure strongly depends on the Fe coverage but no quenching of the magnetic moments is observed in our calculations.Comment: 9 pages, 8 figure

    The chemistry of La on the Si(001) surface

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    This paper reports state-of-the-art electronic structure calculations of La adsorption on the Si(001) surface. We predict La chains in the low coverage limit, which condense in a stable phase at a coverage of 1/5 monolayer. At 1/3 monolayer we predict a chemically rather inert, stable phase. La changes its oxidation state from La(3+) at lower coverages to La(2+) at coverages beyond 1/3 monolayer. In the latter oxidation state, one electron resides in a state with a considerable contribution from La-d and f states.Comment: 10 pages, 13 figures, 3 table

    Quantum Markovian activated surface diffusion of interacting adsorbates

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    A quantum Markovian activated atom-surface diffusion model with interacting adsorbates is proposed for the intermediate scattering function, which is shown to be complex-valued and factorizable into a classical-like and a quantum-mechanical factor. Applications to the diffusion of Na atoms on flat (weakly corrugated) and corrugated-Cu(001) surfaces at different coverages and surface temperatures are analyzed. Quantum effects are relevant to diffusion at low surface temperatures and coverages even for relatively heavy particles, such as Na atoms, where transport by tunneling is absent.Comment: 6 pages, 4 figure

    C58 on Au(111): a scanning tunneling microscopy study

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    C58 fullerenes were adsorbed onto room temperature Au(111) surface by low-energy (~6 eV) cluster ion beam deposition under ultrahigh vacuum conditions. The topographic and electronic properties of the deposits were monitored by means of scanning tunnelling microscopy (STM at 4.2 K). Topographic images reveal that at low coverages fullerene cages are pinned by point dislocation defects on the herringbone reconstructed gold terraces (as well as by step edges). At intermediate coverages, pinned monomers, act as nucleation centres for the formation of oligomeric C58 chains and 2D islands. At the largest coverages studied, the surface becomes covered by 3D interlinked C58 cages. STM topographic images of pinned single adsorbates are essentially featureless. The corresponding local densities of states are consistent with strong cage-substrate interactions. Topographic images of [C58]n oligomers show a stripe-like intensity pattern oriented perpendicular to the axis connecting the cage centers. This striped pattern becomes even more pronounced in maps of the local density of states. As supported by density functional theory, DFT calculations, and also by analogous STM images previously obtained for C60 polymers (M. Nakaya et al., J. Nanosci. Nanotechnol. 11, 2829 (2011)), we conclude that these striped orbital patterns are a fingerprint of covalent intercage bonds. For thick C58 films we have derived a band gap of 1.2 eV from scanning tunnelling spectroscopy data, STS, confirming that the outermost C58 layer behaves as a wide band semiconductor
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