High efficiency InGaAs solar cells on Si by InP layer transfer

InP/Si substrates were fabricated through wafer bonding and helium-induced exfoliation of InP, and InGaAs solar cells lattice matched to bulk InP were grown on these substrates using metal-organic chemical-vapor deposition. The photovoltaic characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epiready InP substrates, thus providing a demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications

Computing Substrates and Life

Alive matter distinguishes itself from inanimate matter by actively maintaining a high degree of inhomogenous organisation. Information processing is quintessential to this capability. The present paper inquires into the degree to which the information processing aspect of living systems can be abstracted from the physical medium of its implementation. Information processing serving to sustain the complex organisation of a living system faces both the harsh reality of real-time requirements and severe constraints on energy and material that can be expended on the task. This issue is of interest for the potential scope of Artificial Life and its interaction with Synthetic Biology. It is pertinent also for information technology. With regard to the latter aspect, the use of a living cell in a robot control architecture is considered

Densification of porous refractory substrates

A hydrolyzed tetraethyl orthosilicate is applied to the surface of a porous refractory substrate following which the substrate is heated to a temperature and for a period of time sufficient to bond the silica released from the tetraethyl orthosilicate to the substrate. The surface is thus densified and strengthened

Morphology and flexibility of graphene and few-layer graphene on various substrates

We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopy and compared to layers on silicon oxide. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on doping, polarity or roughness. Furthermore resist residues exist on top of graphene after a lithographic step. The obtained results provide the opportunity to research the graphene-substrate interactions

Counterions at charge-modulated substrates

We consider counterions in the presence of a single planar surface with a spatially inhomogeneous charge distribution using Monte-Carlo simulations and strong-coupling theory. For high surface charges, multivalent counterions, or pronounced substrate charge modulation the counterions are laterally correlated with the surface charges and their density profile deviates strongly from the limit of a smeared-out substrate charge distribution, in particular exhibiting a much increased laterally averaged density at the surface.Comment: 7 page

On Artificial Magneto-Dielectric Loading for Improving the Impedance Bandwidth Properties of Microstrip Antennas

In the present paper we discuss the effect of artificial magneto-dielectric substrates on the impedance bandwidth properties of microstrip antennas. The results found in the literature for antenna miniaturization using magnetic or magneto-dielectric substrates are revised, and discussion is addressed to the practically realizable artificial magnetic media operating in the microwave regime. Using a transmission-line model we, first, reproduce the known results for antenna miniaturization with non-dispersive material fillings. Next, a realistic dispersive behavior of a practically realizable artificial substrate is embedded into the model, and we show that frequency dispersion of the substrate plays a very important role in the impedance bandwidth characteristics of the loaded antenna. The impedance bandwidths of reduced size patch antennas loaded with dispersive magneto-dielectric substrates and high-permittivity substrates are compared. It is shown that unlike substrates with dispersion-free permeability, practically realizable artificial substrates with dispersive magnetic permeability are not advantageous in antenna miniaturization. This conclusion is experimentally validated.Comment: 22 pages, 14 figures, 5 tables, submitted to IEEE Trans. Antennas Propaga

Characterization of highly-oriented ferroelectric Pb_xBa_(1-x)TiO_3

Pb_xBa_(1-x)TiO_3 (0.2 ≾ x ≾ 1) thin films were deposited on single-crystal MgO as well as amorphous Si_3N_4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD). The ferroelectric films were stoichiometric and highly oriented, with only (001) and (100) orientations evident in x-ray diffraction (XRD) scans. Films on biaxially textured templates had smaller grains (60 nm average) than those deposited on single-crystal MgO (300 nm average). Electron backscatter diffraction (EBSD) has been used to study the microtexture on both types of substrates and the results were consistent with x-ray pole figures and transmission electron microscopy (TEM) micrographs that indicated the presence of 90° domain boundaries, twins, in films deposited on single-crystal MgO substrates. In contrast, films on biaxially textured substrates consisted of small single-domain grains that were either c or a oriented. The surface-sensitive EBSD technique was used to measure the tetragonal tilt angle as well as in-plane and out-of-plane texture. High-temperature x-ray diffraction (HTXRD) of films with 90° domain walls indicated large changes, as much as 60%, in the c and a domain fractions with temperature, while such changes were not observed for Pb_xBa_(1-x)TiO_3 (PBT) films on biaxially textured MgO/Si_3N_4/Si substrates, which lacked 90° domain boundaries

Graphene formation on SiC substrates

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports.Comment: European Conference on Silicon Carbide and Related Materials 2008 (ECSCRM '08), 4 pages, 4 figure