Exceeding the Shockley-Queisser limit within the detailed balance framework

The Shockley-Queisser limit is one of the most fundamental results in the field of photovoltaics. Based on the principle of detailed balance, it defines an upper limit for a single junction solar cell that uses an absorber material with a specific band gap. Although methods exist that allow a solar cell to exceed the Shockley-Queisser limit, here we show that it is possible to exceed the Shockley-Queisser limit without considering any of these additions. Merely by introducing an absorptivity that does not assume that every photon with an energy above the band gap is absorbed, efficiencies above the Shockley-Queisser limit are obtained. This is related to the fact that assuming optimal absorption properties also maximizes the recombination current within the detailed balance approach. We conclude that considering a finite thickness for the absorber layer allows the efficiency to exceed the Shockley-Queisser limit, and that this is more likely to occur for materials with small band gaps.Comment: 6 pages, 3 figure

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell

Tuning up the performance of GaAs-based solar cells by inelastic scattering on quantum dots and doping of AlyGa1-ySb type-II dots and AlxGa1-xAs spacers between dots

We used AlGaSb/AlGaAs material system for a theoretical study of photovoltaic performance of the proposed GaAs-based solar cell in which the type-II quantum dot (QDs) absorber is spatially separated from the depletion region. Due to inelastic scattering of photoelectrons on QDs and proper doping of both QDs and their spacers, concentrated sunlight is predicted to quench recombination through QDs. Our calculation shows that 500-sun concentration can increase the Shockley-Queisser limit from 35% to 40% for GaAs single-junction solar cells.Comment: 8 pages, 7 figures; Contributed paper to SPIE Photonics West, San Francisco, CA, USA, February 201

Wide-band-gap InAlAs solar cell for an alternative multijunction approach

We have fabricated an In_(0.52)Al_(0.48)As solar cell lattice-matched to InP with efficiency higher than 14% and maximum external quantum efficiency equal to 81%. High quality, dislocation-free In_xAl_(1−x)As alloyed layers were used to fabricate the single junction solar cell. Photoluminescence of In_xAl_(1−x)As showed good material quality and lifetime of over 200 ps. A high band gap In_(0.35)Al_(0.65)As window was used to increase light absorption within the p-n absorber layer and improve cell efficiency, despite strain. The InAlAs top cell reported here is a key building block for an InP-based three junction high efficiency solar cell consisting of InAlAs/InGaAsP/InGaAs lattice-matched to the substrate

Theoretical Limits of Photovoltaics Efficiency and Possible Improvements by Intuitive Approaches Learned from Photosynthesis and Quantum Coherence

In this review, we present and discussed the main trends in photovoltaics with emphasize on the conversion efficiency limits. The theoretical limits of various photovoltaics device concepts are presented and analyzed using a flexible detailed balance model where more discussion emphasize is toward the losses. Also, few lessons from nature and other fields to improve the conversion efficiency in photovoltaics are presented and discussed as well. From photosynthesis, the perfect exciton transport in photosynthetic complexes can be utilized for PVs. Also, we present some lessons learned from other fields like recombination suppression by quantum coherence. For example, the coupling in photosynthetic reaction centers is used to suppress recombination in photocells.Comment: 47 pages, 22 figures. arXiv admin note: text overlap with arXiv:1307.5093, arXiv:1105.4189 by other author

Ideal Bandgap in a 2D Ruddlesden-Popper Perovskite Chalcogenide for Single-junction Solar Cells

Transition metal perovskite chalcogenides (TMPCs) are explored as stable, environmentally friendly semiconductors for solar energy conversion. They can be viewed as the inorganic alternatives to hybrid halide perovskites, and chalcogenide counterparts of perovskite oxides with desirable optoelectronic properties in the visible and infrared part of the electromagnetic spectrum. Past theoretical studies have predicted large absorption coefficient, desirable defect characteristics, and bulk photovoltaic effect in TMPCs. Despite recent progresses in polycrystalline synthesis and measurements of their optical properties, it is necessary to grow these materials in high crystalline quality to develop a fundamental understanding of their optical properties and evaluate their suitability for photovoltaic application. Here, we report the growth of single crystals of a two-dimensional (2D) perovskite chalcogenide, Ba3Zr2S7, with a natural superlattice-like structure of alternating double-layer perovskite blocks and single-layer rock salt structure. The material demonstrated a bright photoluminescence peak at 1.28 eV with a large external luminescence efficiency of up to 0.15%. We performed time-resolved photoluminescence spectroscopy on these crystals and obtained an effective recombination time of ~65 ns. These results clearly show that 2D Ruddlesden-Popper phases of perovskite chalcogenides are promising materials to achieve single-junction solar cells.Comment: 4 Figure