The Effects Of Fabricational Variations On Quantum Wire Laser Gain Spectra And Performance

The effects of fabricational variations on the gain spectra of quantum wires are calculated within the limits of first order perturbation theory. Gain spectra and density of states for 50Å radius and 150Å radius cylindrical quantum wires are calculated and plotted for several different fabrication tolerances. The wave functions for a finite, cylindrical potential are calculated and a quasi-critical radius, below which the carriers are weakly confined by the potential, is established. This sets a lower limit on quantum wire size. Upper limits on the size of quantum wells, quantum wires, and quantum boxes are also discussed. The threshold current and differential gain of quantum wire lasers and quantum wire array lasers are calculated. These calculations indicate a possible reduction in threshold current of one to two orders of magnitude as compared to the best quantum well lasers to date

Quantum noise and dynamics in quantum well and quantum wire lasers

We calculate the relaxation oscillation corner frequency fr and the linewidth enhancement factor alpha for both a quantum well and a quantum wire semiconductor laser. A comparison of the results to those of a conventional double heterostructure device indicates that fr can be enhanced by 2× in the quantum well case and 3× in the quantum wire case while alpha is reduced in both cases

Nanowire terahertz quantum cascade lasers

International audienceQuantum cascade lasers made of nanowire axial heterostructures are proposed. The dissipative quantum dynamics of their carriers is theoretically investigated using non-equilibrium Green functions. Their transport and gain properties are calculated for varying nanowire thickness, from the classical-wire regime to the quantum-wire regime. Our calculation shows that the lateral quantum confinement provided by the nanowires allows an increase of the maximum operation temperature and a strong reduction of the current density threshold compared to conventional terahertz quantum cascade laser

Enhanced modulation bandwidth of GaAlAs double heterostructure lasers in high magnetic fields: Dynamic response with quantum wire effects

The modulation bandwidth of GaAlAs double heterostructure (DH) lasers in high magnetic fields is measured. We found that the modulation bandwidth is enhanced by 1.4× with a magnetic field of 20 T. This improvement is believed to result from the increase of the differential gain due to two-dimensional carrier confinement effects in the high magnetic field (quantum wire effects). A comparison of the experimental results with a theoretical analysis indicates that the intraband relaxation time tauin of the measured DH laser in the range of 0.1 to 0.2 ps

Lasing from a single quantum wire

A laser with an active volume consisting of only a single quantum wire in the 1-dimensional (1-D) ground state is demonstrated. The single wire is formed quantum-mechanically at the T-intersection of a 14 nm Al_{0.07}Ga_{0.93}As quantum well and a 6 nm GaAs quantum well, and is embedded in a 1-D single-mode optical waveguide. We observe single-mode lasing from the quantum wire ground state by optical pumping. The laser operates from 5 to 60 K, and has a low threshold pumping power of 5 mW at 5 K.Comment: 4 pages including 4 figure

Controlling Stray Electric Fields on an Atom Chip for Rydberg Experiments

Experiments handling Rydberg atoms near surfaces must necessarily deal with the high sensitivity of Rydberg atoms to (stray) electric fields that typically emanate from adsorbates on the surface. We demonstrate a method to modify and reduce the stray electric field by changing the adsorbates distribution. We use one of the Rydberg excitation lasers to locally affect the adsorbed dipole distribution. By adjusting the averaged exposure time we change the strength (with the minimal value less than $0.2\,\textrm{V/cm}$ at $78\,\mu\textrm{m}$ from the chip) and even the sign of the perpendicular field component. This technique is a useful tool for experiments handling Ryberg atoms near surfaces, including atom chips

A diode laser stabilization scheme for 40Ca+ single ion spectroscopy

We present a scheme for stabilizing multiple lasers at wavelengths between 795 and 866 nm to the same atomic reference line. A reference laser at 852 nm is stabilized to the Cs D2 line using a Doppler-free frequency modulation technique. Through transfer cavities, four lasers are stabilized to the relevant atomic transitions in 40Ca+. The rms linewidth of a transfer-locked laser is measured to be 123 kHz with respect to an independent atomic reference, the Rb D1 line. This stability is confirmed by the comparison of an excitation spectrum of a single 40Ca+ ion to an eight-level Bloch equation model. The measured Allan variance of 10^(-22) at 10 s demonstrates a high degree of stability for time scales up to 100 s.Comment: 8 pages, 11 figure