Artificial control of the bias-voltage dependence of tunnelling anisotropic magnetoresistance using quantization in a single-crystal ferromagnet

A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of great importance. Here, we demonstrate the control of the carrier-energy dependence of the magnetic anisotropy of the density of states (DOS) using the quantum size effect in a single-crystal ferromagnetic material, GaMnAs. We show that the mainly two-fold symmetry of the magnetic anisotropy of DOS, which is attributed to the impurity band, is changed to a four-fold symmetry by enhancing the quantum size effect in the valence band of the GaMnAs quantum wells. By combination with the gate-electric field control technique, our concept of the usage of the quantum size effect for the control of the magnetism will pave the way for the ultra-low-power manipulation of magnetization in future spintronic devices.Comment: 9 pages, 7 figure

Quantum Size Effect transition in percolating nanocomposite films

We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster (IC). At low temperature, mesoscopic effects revealed on the conductivity, Hall effect experiments and low frequency electrical noise (random telegraph noise and 1/f noise) strongly support the existence of a temperature-induced Quantum Size Effect (QSE) transition in the metallic conduction path. Below a critical temperature related to the geometrical constriction sizes of the IC, the electronic conductivity is mainly governed by active tunnel conductance across barriers in the metallic network. The high 1/f noise level and the random telegraph noise are consistently explained by random potential modulation of the barriers transmittance due to local Coulomb charges. Our results provide evidence that a lowering of the temperature is somehow equivalent to a decrease of the metal fraction in the vicinity of the percolation limit.Comment: 21 pages, 8 figure

Ag2ZnSnS4 Nanocrystals Expand the Availability of RoHS Compliant Colloidal Quantum Dots

The demonstration of the quantum confinement effect in colloidal quantum dots (QDs) has been extensively studied and exploited mainly in Pb and Cd chalcogenide systems. There has been an urgent need recently for the development of non(less)-toxic colloidal QDs to warrant compliance with current safety regulations (Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC). Herein, we report Pb/Cd-free, solution processed luminescent Ag2ZnSnS4 (AZTS) colloidal QDs. We present a selective and controlled amine and thiol-free synthesis of air stable luminescent AZTS QDs by the hot injection technique. By controlling the reaction conditions we obtain controlled size variation and demonstrate the quantum confinement effect that is in good agreement with the theoretically calculated values. The band gap of the AZTS QDs is size-tunable in the near-infrared from 740 to 850 nm. Finally, we passivate the surface with Zn-oleate, which yields higher quantum yield (QY), longer lifetime, and better colloidal stability.Peer ReviewedPostprint (published version

Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.Comment: 5 pages, 5 figure

Interplay between Quantum Size Effect and Strain Effect on Growth of Nanoscale Metal Thin Film

We develop a theoretical framework to investigate the interplay between quantum size effect (QSE) and strain effect on the stability of metal nanofilms. The QSE and strain effect are shown to be coupled through the concept of "quantum electronic stress. First-principles calculations reveal large quantum oscillations in the surface stress of metal nanofilms as a function of film thickness. This adds extrinsically additional strain-coupled quantum oscillations to surface energy of strained metal nanofilms. Our theory enables a quantitative estimation of the amount of strain in experimental samples, and suggests strain be an important factor contributing to the discrepancies between the existing theories and experiments