Strain-induced ferroelectricity in simple rocksalt binary oxides

The alkaline earth binary oxides adopt a simple rocksalt structure and form an important family of compounds because of their large presence in the earth's mantle and their potential use in microelectronic devices. In comparison to the class of multifunctional ferroelectric perovskite oxides, however, their practical applications remain limited and the emergence of ferroelectricity and related functional properties in simple binary oxides seems so unlikely that it was never previously considered. Here, we show using first-principles density functional calculations that ferroelectricity can be easily induced in simple alkaline earth binary oxides such as barium oxide (BaO) using appropriate epitaxial strains. Going beyond the fundamental discovery, we show that the functional properties (polarization, dielectric constant and piezoelectric response) of such strained binary oxides are comparable in magnitude to those of typical ferroelectric perovskite oxides, so making them of direct interest for applications. Finally, we show that magnetic binary oxides such as EuO, with the same rocksalt structure, behave similarly to the alkaline earth oxides, suggesting a route to new multiferroics combining ferroelectric and magnetic properties

A transformative route to nanoporous manganese oxides of controlled oxidation states with identical textural properties

Nanoporous nanocrystalline metal oxides with tunable oxidation states are crucial for controlling their catalytic, electronic, and optical properties. However, previous approaches to modulate oxidation states in nanoporous metal oxides commonly lead to the breakdown of the nanoporous structure as well as involve concomitant changes in their morphology, pore size, surface area, and nanocrystalline size. Herein, we present a transformative route to nanoporous metal oxides with various oxidation states using manganese oxides as model systems. Thermal conversion of Mn-based metal-organic frameworks (Mn-MOFs) at controlled temperature and atmosphere yielded a series of nanoporous manganese oxides with continuously tuned oxidation states: MnO, Mn3O 4, Mn5O8, and Mn2O3. This transformation enabled the preparation of low-oxidation phase MnO and metastable intermediate phase Mn5O8 with nanoporous architectures, which were previously rarely accessible. Significantly, nanoporous MnO, Mn3O4, and Mn5O8 had a very similar morphology, surface area, and crystalline size. We investigated the electrocatalytic activity of nanoporous manganese oxides for oxygen reduction reaction (ORR) to identify the role of oxidation states, and observed oxidation state-dependent activity and kinetics for the ORR.close5

Magnetotransport and spin dynamics in an electron gas formed at oxide interfaces

We investigate the spin-dependent transport properties of a two-dimensional electron gas formed at oxides' interface in the presence of a magnetic field. We consider several scenarios for the oxides' properties, including oxides with co-linear or spiral magnetic and ferroelectric order. For spiral multiferroic oxides, the magnetoelectric coupling and the topology of the localized magnetic moments introduce additional, electric field controlled spin-orbit coupling that affects the magneto-oscillation of the current. An interplay of this spin-orbit coupling, the exchange field, and of the applied magnetic field results in a quantum, gate-controlled spin and charge Hall conductance

Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides

Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries. Shallow Trench Isolation and Pre-Metal Dielectric are studied using electrical measurements performed after X-ray irradiations and isochronal annealing cycles. This paper shows that trapping properties of such isolation oxides can strongly differ from those of traditional thermal oxides usually used to process the gate oxide of Metal Oxide Semiconductor Field Effect Transistors. Buildup and annealing of both radiation-induced oxide-trap charge and radiation-induced interface traps are discussed as a function of the oxide type, foundry and bias condition during irradiation. Radiation-induced interface traps in such isolation oxides are shown to anneal below 100°C contrary to what is usually observed in thermal oxides. Implications for design hardening and radiation tests of CMOS Integrated Circuits are discussed

Photoferroelectric oxides

Giant photovoltaic effect due to bulk photovoltaic effect observed in multiferroic BiFeO3 thin films has triggered a renewed interest on photoferroelectric materials for photovoltaic applications. Tremendous advance has been done to improve power conversion efficiency (up to up to 8.1%) in photoferroelectrics via absorption increase using narrow bandgap ferroelectrics. Other strategies, as it is the more efficient use of ferroelectric internal electric field, are ongoing. Moreover, as a by-product, several progress have been also achieved on photostriction that is the photo-induced deformation phenomenon. Here, we review ongoing and promising routes to improve ferroelectrics photoresponse

DEFECT PHENOMENA IN SUPERCONDUCTING OXIDES AND ANALOGOUS CERAMIC OXIDES

In this review we discuss defect phenomena in superconducting oxides. We survey those aspects of oxide superconductors which relate them most closely to conventional ceramic oxides, concentrating on processes and behaviour related to defects. We also identify areas of difference between two types of oxide.Theoretical modelling of conventional oxides has been extremely effective, and we emphasize that some of these modelling tools can be exploited for the superconducting oxides too. In particular, we stress those methods and ideas that provide a framework for understanding behaviour, those that provide a datasbase of good quantitative experiments and those that provide an established and tested approach to quantitative modelling as a guide to prediction, optimization and extrapolation.Much progress has been made in both theory and experiment, but some problems do remain and these have not been omitted from our discussions. There is potential to exploit past work on defects in oxides, so as to control defect processes and microstructure and hence to enhance performance

White Lines and 3d-Occupancy for the 3d Transition-Metal Oxides

Electron energy-loss spectrometry was employed to measure the white lines at the L23 absorption edges of the 3d transition-metal oxides and lithium transition-metal oxides. The white-line ratio (L3/L2) was found to increase between d^0 and d^5 and decrease between d^5 and d^10, consistent with previous results for the transition metals and their oxides. The intensities of the white lines, normalized to the post-edge background, are linear for the 3d transition-metal oxides and lithium transition-metal oxides. An empirical correlation between normalized white-line intensity and 3d occupancy is established. It provides a method for measuring changes in the 3d-state occupancy. As an example, this empirical relationship is used to measure changes in the transition-metal valences of Li_{1-x}Ni_{0.8}Co_{0.2}O_2 in the range of 0 < x < 0.64. In these experiments the 3d occupancy of the nickel ion decreased upon lithium deintercalation, while the cobalt valence remained constant.Comment: 6 pages, 7 figure