Donor behavior in indium-alloyed silicon

The anomalous doping behavior of Si regrown from In solution was studied by (1) Schottky barrier evaluation of conductivity type, (2) electron microprobe analysis for phosphorus, and (3) channeling effect measurements for interstitial In. The latter showed In present at ~ 10^19 cm^–3, but not occupying a regular substitutional or interstitial position. A correlation was found in the first two measurements between phosphorus contamination and n-type conductivity. When the In was contacted only by quartz freshly etched in HF, the n-type behavior and phosphorus contamination disappeared. The anomalous doping behavior is most likely due to phosphorus inpurity picked up by the In

Asymptotics of solutions in nA+nB->C reaction Diffusion systems

We analyze the long time behavior of initial value problems that model a process where particles of type A and B diffuse in some substratum and react according to $nA+nB\to C$. The case n=1 has been studied before; it presents nontrivial behavior on the reactive scale only. In this paper we discuss in detail the cases $n>3$, and prove that they show nontrivial behavior on the reactive and the diffusive length scale.Comment: 22 pages, 1 figur

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Atomically thin MoS2 has recently emerged as a very attractive material for nanoscale optoelectronic devices. While n-type transport in MoS2 devices has been demonstrated, hole conduction has been more challenging. Here we show work-function engineering to be an effective approach for controlling the polarity of MoS2 devices. Gated multi-layer MoS2 transistors with Au source/drain contacts exhibit n-type operation, while those with Pd contacts are shown to have p-type behavior. Devices with one Au and one Pd contact exhibit asymmetric ambipolar behavior and diode characteristics over a wide range of gate voltage, as well as a sizable photovoltaic effect. We argue that the photovoltaic effect arises from the built-in potential of the space charge accumulated at the source and drain contacts.Comment: 11 pages, 5 figure

Vertical spinal electronic device with large room temperature magnetoresistance

We report experimental transport measurements of a vertical hybrid ferromagnetic (FM)/III-V semiconductor (SC)/ferromagnetic(FM) type structure, i.e., Cr(20ML)/Co(15ML)/GaAs(50 nm, n-type)/Al/sub 0.3/Ga/sub 0.7/As(200 nm, n-type)/FeNi(30 nm). The current-voltage (I-V) characteristics reveal Schottky/tunneling type behavior in the direction of FeNi/Semiconductor/Co and observed to be dependent on external magnetic field. The magnetoresistance (MR) behavior shows a strong dependence on the measured current and field. At low fields no significant change in MR has been observed with increasing current. However, at high fields the MR initially increases with increasing current and becomes stable beyond a critical current of 10 /spl mu/A. A maximum of 12% change in the MR has been observed at room temperature, which is far larger than that of the conventional AMR effect. This property of the device could be utilized as field sensors or magnetic logic devices

Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict persistent electron photoconductivity (n-type PPC) caused by the oxygen vacancy VO in n-ZnO, and persistent hole photoconductivity (p-type PPC) caused by the Se vacancy VSe in p-CuInSe2 and p-CuGaSe2. We find that VSe in the chalcopyrite materials is amphoteric having two "negative-U" like transitions, i.e. a double-donor transition e(2+/0) close to the valence band and a double-acceptor transition e(0/2-) closer to the conduction band. We introduce a classification scheme that distinguishes two types of defects (e.g., donors): type-alpha, which have a defect-localized-state (DLS) in the gap, and type-beta, which have a resonant DLS within the host bands (e.g., conduction band). In the latter case, the introduced carriers (e.g., electrons) relax to the band edge where they can occupy a perturbed-host-state (PHS). Type alpha is non-conducting, whereas type beta is conducting. We identify the neutral anion vacancy as type-alpha and the doubly positively charged vacancy as type-beta. We suggest that illumination changes the charge state of the anion vacancy and leads to a crossover between alpha- and beta-type behavior, resulting in metastability and PPC. In CuInSe2, the metastable behavior of VSe is carried over to the (VSe-VCu) complex, which we identify as the physical origin of PPC observed experimentally. We explain previous puzzling experimental results in ZnO and CuInSe2 in the light of this model.Comment: submitted to Phys. Rev.