Monolithically integrated active optical devices

Considerations relevant to the monolithic integration of optical detectors, lasers, and modulators with high speed amplifiers are discussed. Some design considerations for representative subsystems in the GaAs-AlGaAs and GaInAs-InP materials systems are described. Results of a detailed numerical design of an electro-optical birefringent filter for monolithic integration with a laser diode is described, and early experimental results on monolithic integration of broadband MESFET amplifiers with photoconductive detectors are reported

All-integrated universal RF photonic spectral shaper

We demonstrate a microwave photonic spectral shaper in a silicon chip enabling distinct phase and amplitude modulation transformation. We show unprecedented RF filtering through monolithic integration of the spectral shaper with tunable ring resonators

A fully integrated high-Q Whispering-Gallery Wedge Resonator

Microresonator devices which posses ultra-high quality factors are essential for fundamental investigations and applications. Microsphere and microtoroid resonators support remarkably high Q's at optical frequencies, while planarity constrains preclude their integration into functional lightwave circuits. Conventional semiconductor processing can also be used to realize ultra-high-Q's with planar wedge-resonators. Still, their full integration with side-coupled dielectric waveguides remains an issue. Here we show the full monolithic integration of a wedge-resonator/waveguide vertically-coupled system on a silicon chip. In this approach the cavity and the waveguide lay in different planes. This permits to realize the shallow-angle wedge while the waveguide remains intact, allowing therefore to engineer a coupling of arbitrary strength between these two. The precise size-control and the robustness against post-processing operation due to its monolithic integration makes this system a prominent platform for industrial-scale integration of ultra-high-Q devices into planar lightwave chips.Comment: 6 pages, 4 figure

Monolithic Integration of a Plasmonic Sensor with CMOS Technology

Monolithic integration of nanophotonic sensors with CMOS detectors can transform the laboratory based nanophotonic sensors into practical devices with a range of applications in everyday life. In this work, by monolithically integrating an array of gold nanodiscs with the CMOS photodiode we have developed a compact and miniaturized nanophotonic sensor system having direct electrical read out. Doing so eliminates the need of expensive and bulky laboratory based optical spectrum analyzers used currently for measurements of nanophotonic sensor chips. The experimental optical sensitivity of the gold nanodiscs is measured to be 275 nm/RIU which translates to an electrical sensitivity of 5.4 V/RIU. This integration of nanophotonic sensors with the CMOS electronics has the potential to revolutionize personalized medical diagnostics similar to the way in which the CMOS technology has revolutionized the electronics industry

Optofluidic Distributed Feedback Dye Lasers

We review our recent work on poly(dimethylsiloxane) (PDMS)-based optofluidic dye lasers using a guided wave distributed feedback (DFB) cavity. We show experimental results of single-mode operation, an integrated laser array, multiple color dye lasing, mechanical and fluidic tuning, and monolithic integration with microfluidic circuits. Potential applications and future directions are discussed

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices

Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed

AlGaAs lasers with micro-cleaved mirrors suitable for monolithic integration

A technique has been developed for cleaving the mirrors of AlGaAs lasers without cleaving the substrate. Micro-cleaving involves cleaving a suspended heterostructure cantilever by ultrasonic vibrations. Lasers with microcleaved mirrors have threshold currents and quantum efficiencies identical to those of similar devices with conventionally cleaved mirrors