Cross-talk between topological defects in different fields revealed by nematic microfluidics

Topological defects are singularities in material fields that play a vital role across a range of systems: from cosmic microwave background polarization to superconductors, and biological materials. Although topological defects and their mutual interactions have been extensively studied, little is known about the interplay between defects in different fields -- especially when they co-evolve -- within the same physical system. Here, using nematic microfluidics, we study the cross-talk of topological defects in two different material fields -- the velocity field and the molecular orientational field. Specifically, we generate hydrodynamic stagnation points of different topological charges at the center of star-shaped microfluidic junctions, which then interact with emergent topological defects in the orientational field of the nematic director. We combine experiments, and analytical and numerical calculations to demonstrate that a hydrodynamic singularity of given topological charge can nucleate a nematic defect of equal topological charge, and corroborate this by creating $-1$, $-2$ and $-3$ topological defects in $4-$, $6-$, and $8-$arm junctions. Our work is an attempt toward understanding materials that are governed by distinctly multi-field topology, where disparate topology-carrying fields are coupled, and concertedly determine the material properties and response.Comment: 18 pages, 9 figure

Nanoscale gold pillars strengthened through dislocation starvation

It has been known for more than half a century that crystals can be made stronger by introducing defects into them, i.e., by strain-hardening. As the number of defects increases, their movement and multiplication is impeded, thus strengthening the material. In the present work we show hardening by dislocation starvation, a fundamentally different strengthening mechanism based on the elimination of defects from the crystal. We demonstrate that submicrometer sized gold crystals can be 50 times stronger than their bulk counterparts due to the elimination of defects from the crystal in the course of deformation

Vortex Washboard Voltage Noise in Type-II Superconductors

In order to characterize flux flow through disordered type-II superconductors, we investigate the effects of columnar and point defects on the vortex velocity / voltage power spectrum in the driven non-equilibrium steady state. We employ three-dimensional Metropolis Monte Carlo simulations to measure relevant physical observables including the force-velocity / current-voltage (I-V) characteristics, vortex spatial arrangement and structure factor, and mean flux line radius of gyration. Our simulation results compare well to earlier findings and physical intuition. We focus specifically on the voltage noise power spectra in conjunction with the vortex structure factor in the presence of weak columnar and point pinning centers. We investigate the vortex washboard noise peak and associated higher harmonics, and show that the intensity ratios of the washboard harmonics are determined by the strength of the material defects rather than the type of pins present. Through varying columnar defect lengths and pinning strengths as well as magnetic flux density we further explore the effect of the material defects on vortex transport. It is demonstrated that the radius of gyration displays quantitatively unique features that depend characteristically on the type of material defects present in the sample.Comment: Latex, 17 pages, 14 figure

Delocalised oxygen as the origin of two-level defects in Josephson junctions

One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bi-stable material defects. Although a variety of phenomenological models exist, the true microscopic origin of these defects remains elusive. For the first time we show that these defects may arise from delocalisation of the atomic position of the oxygen in the oxide forming the Josephson junction barrier. Using a microscopic model, we compute experimentally observable parameters for phase qubits. Such defects are charge neutral but have non-zero response to both applied electric field and strain. This may explain the observed long coherence time of two-level defects in the presence of charge noise, while still coupling to the junction electric field and substrate phonons.Comment: 5 pages, 4 figures. This version streamlines presentation and focuses on the 2D model. Also fixed embarrassing typo (pF -> fF

Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2

Imperfections in the crystal structure, such as point defects, can strongly modify the optical and transport properties of materials. Here, we study the effect of point defects on the optical and DC conductivities of single layers of semiconducting transition metal dichalcogenides with the form $M$S$_2$, where $M$=Mo or W. The electronic structure is considered within a six bands tight-binding model, which accounts for the relevant combination of $d$ orbitals of the metal $M$ and $p$ orbitals of the chalcogen $S$. We use the Kubo formula for the calculation of the conductivity in samples with different distributions of disorder. We find that $M$ and/or S defects create mid-gap states that localize charge carriers around the defects and which modify the optical and transport properties of the material, in agreement with recent experiments. Furthermore, our results indicate a much higher mobility for $p$-doped WS$_2$ in comparison to MoS$_2$