Line width distributions as evidence for axisymmetry in the broad line regions of active galaxies

The nuclei of a wide class of active galaxies emit broad emission lines with widths at half maximum (FWHM) in the range $10^{3}-10^{4}$ km s$^{-1}$. This spread of widths is not solely a consequence of the range of the luminosities of these sources since a plot of width versus luminosity shows a large scatter. We propose that the broad line emission region (BLR) is axially symmetric and that this scatter in line width arises from an additional dependence on the angle of the line of sight to the axis of the emission region. Such a relation is natural in unified models of active nuclei which link a variety of observed properties to viewing angle. Adopting a simple form for the line width as a function of luminosity and angle, and convolving this with the observed luminosity function, allows us to predict a line width distribution consistent with the available data. Furthermore, we use the relation between the equivalent width of a line and the luminosity in the continuum (the `Baldwin Effect') to predict an observed correlation between line width and equivalent width. The scatter on this correlation is again provided by angular dependence. The results have applications as diagnostics of models of the broad line emission region and in cosmology.Comment: 8 pages including 4 figures. Accepted for publication in MNRAS Letter

Spectral Line Width Broadening from Pair Fluctuation in a Frozen Rydberg Gas

Spectral line width broadening in Rydberg gases, a phenomenon previously attributed to the many-body effect, was observed experimentally almost a decade ago. The observed line width was typically 80-100 times larger than the average interaction strength predicted from a binary interaction. The interpretation of such a phenomenon is usually based on the so-called diffusion model, where the line width broadening mostly originates from the diffusion of excitations. In this paper, we present a model calculation to show that diffusion is not the main mechanism to the line width broadening. We find that the rare pair fluctuation at small separation is the dominant factor contributing to this broadening. Our results give a width of about 20-30 times larger than the average interaction strength. More importantly, by turning off the diffusion process, we do not observe order of magnitude change in the spectral line width

Grouping Method Of Image Fragments Of Adjacent Dislocation Etch Pits Of The Semiconductor Wafer

An increase in production volumes of gallium arsenide semiconductor devices determines the need for better control of dislocations of semiconductor wafer.The grouping method of image fragments of adjacent dislocation etch pits of the semiconductor wafer is proposed in the article. Adjacent fragments will be allocated in the pre-binarized image of wafer surface, which contains adjacent fragments of etch pits of dislocation loops after treatment by the described method. Improved methods for determining the loop line width determines the edge line width of etch pits of suspected dislocations, given the variability of their display in the binarized image. The current loop line width is compared to the reference line width of the dislocation loop.The grouping method of image fragments of adjacent dislocation etch pits of the semiconductor wafer defines recovery of loop lines branching, takes into account various options of line adjacency and determines the direction of further recovery of loop line of dislocation etch pits. A step by step description of the method is given

Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically

Higher order glass-transition singularities in colloidal systems with attractive interactions

The transition from a liquid to a glass in colloidal suspensions of particles interacting through a hard core plus an attractive square-well potential is studied within the mode-coupling-theory framework. When the width of the attractive potential is much shorter than the hard-core diameter, a reentrant behavior of the liquid-glass line, and a glass-glass-transition line are found in the temperature-density plane of the model. For small well-width values, the glass-glass-transition line terminates in a third order bifurcation point, i.e. in a A_3 (cusp) singularity. On increasing the square-well width, the glass-glass line disappears, giving rise to a fourth order A_4 (swallow-tail) singularity at a critical well width. Close to the A_3 and A_4 singularities the decay of the density correlators shows stretching of huge dynamical windows, in particular logarithmic time dependence.Comment: 19 pages, 12 figures, Phys. Rev. E, in prin

The investigation of EPR paramagnetic probe line width and shape temperature dependence in high-temperature superconductors of Bi–Pb–Sr–Ca–Cu–O system

The work is related with the finding out of magnetic phases in strongly anisotropic high-temperature superconductor Bi1,7Pb0,3Sr2Ca2Cu3O10-δ in the temperature region where the superconductor is in the normal state. It was studied the temperature dependence of the paramagnetic probe EPR line width. In the normal state at T\u3eTc near 175 K it was revealed a pick in the temperature dependence of line width. In this region it was observed the time increase of the line width with the characteristic time ~ 17 min. This shows the possibility of magnetic phase formation in this material