Longitudinal mode spectrum of GaAs injection lasers under high-frequency microwave modulation

Experimental observations of the lasing spectrum of a single mode semiconductor laser under continuous microwave modulation reveal that the lasing spectrum is apparently locked to a single longitudinal mode for optical modulation depths up to ~80%, beyond which the lasing spectrum becomes multimoded, whose envelope width increases very rapidly with further increase in modulation depth. These results are satisfactorily explained by a theoretical treatment which enables one to predict the dynamic lasing spectrum of a laser from its cw lasing spectra at various output powers

Mode Repulsion and Mode Coupling in Random Lasers

We studied experimentally and theoretically the interaction of lasing modes in random media. In a homogeneously broadened gain medium, cross gain saturation leads to spatial repulsion of lasing modes. In an inhomogeneously broadened gain medium, mode repulsion occurs in the spectral domain. Some lasing modes are coupled through photon hopping or electron absorption and reemission. Under pulsed pumping, weak coupling of two modes leads to synchronization of their lasing action. Strong coupling of two lasing modes results in anti-phased oscillations of their intensities.Comment: 13 pages, 4 figure

A study of random laser modes in disordered photonic crystals

We studied lasing modes in a disordered photonic crystal. The scaling of the lasing threshold with the system size depends on the strength of disorder. For sufficiently large size, the minimum of the lasing threshold occurs at some finite value of disorder strength. The highest random cavity quality factor was comparable to that of an intentionally introduced single defect. At the minimum, the lasing threshold showed a super-exponential decrease with the size of the system. We explain it through a migration of the lasing mode frequencies toward the photonic bandgap center, where the localization length takes the minimum value. Random lasers with exponentially low thresholds are predicted.Comment: 4 pages, 4 figure

Room temperature continuous wave operation of single-mode, edge-emitting photonic crystal Bragg lasers

We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100μm wide and 550μm long on-chip devices. We also demonstrate the tuning of the lasing wavelength by changing the transverse lattice constant of the photonic crystal. This enables a fine wavelength tuning sensitivity (change of the lasing wavelength/change of the lattice constant) of 0.072. This dependence proves that the lasing mode is selected by the photonic crystal lattice

Ultra-low threshold polariton lasing in photonic crystal cavities

The authors show clear experimental evidence of lasing of exciton polaritons confined in L3 photonic crystal cavities. The samples are based on an InP membrane in air containing five InAsP quantum wells. Polariton lasing is observed with thresholds as low as 120 nW, below the Mott transition, while conventional photon lasing is observed for a pumping power one to three orders of magnitude higher.Comment: 4 pages, 3 figure

Purely excitonic lasing in ZnO microcrystals: Temperature-induced transition between exciton-exciton and exciton-electron scattering

Since the seminal observation of room-temperature laser emission from ZnO thin films and nanowires, numerous attempts have been carried out for detailed understanding of the lasing mechanism in ZnO. In spite of the extensive efforts performed over the last decades, the origin of optical gain at room temperature is still a matter of considerable discussion. In this work, we show that a ZnO film consisting of well-packed micrometer-sized ZnO crystals exhibits purely excitonic lasing at room temperature without showing any symptoms of electron-hole plasma emission, even under optical excitation more than 25 times above the excitonic lasing threshold. The lasing mechanism is shifted from the exciton-exciton scattering to the exciton-electron scattering with increasing temperature from 3 to 150 K. The exciton-electron scattering process continues to exist with further increasing temperature from 150 to 300 K. Thus, we present distinct experimental evidence that the room-temperature excitonic lasing is achieved not by exciton-exciton scattering, as has been generally believed, but by exciton-electron scattering. We also argue that the long carrier diffusion length and the low optical loss nature of the micrometer-sized ZnO crystals, as compared to those of ZnO nanostructures, plays a key role in showing room-temperature excitonic lasing

Numerical Study of Amplified Spontaneous Emission and Lasing in Random Media

We simulate the transition from amplified spontaneous emission (ASE) to lasing in random systems with varying degrees of mode overlap. This is accomplished by solving the stochastic Maxwell-Bloch equations with the finite-difference time-domain method. Below lasing threshold, the continuous emission spectra are narrowed by frequency-dependent amplification. Our simulations reproduce the stochastic emission spikes in the spectra. Well-defined peaks, corresponding to the system resonances, emerge at higher pumping and are narrowed by stimulated emission before lasing takes place. Noise tends to distribute pump energy over many modes, resulting in multi-mode operation. Well above the lasing threshold, the effects of noise lessen and results become similar to those without noise. By comparing systems of different scattering strength, we find that weaker scattering extends the transition region from ASE to lasing, where the effects of noise are most significant.Comment: 25 pages, 11 figure