Hot Electron Magnetotransport in a Spin-Valve Transistor at Finite temperatures

The hot electron magnetotransport in a spin-valve transistor has been theoretically explored at finite temperatures. We have explored the parallel and anti-parallel collector current changing the relative spin orientation of the ferromagnetic layers at finite temperatures. In this model calculations, hot electron energy redistribution due to spatial inhomogeneity of Schottky barrier heights and hot electron spin polarization in the ferromagnetic layer at finite temperatures have been taken into account. The results of this model calculations accord with the experimental data semi-quantitative manner. We therefore suggest that both effects remarked above should be taken into account substantially when one explores the hot electron magnetotransport in a spin-valve system transistor at finite temperatures.Comment: p pages, 3 figure

Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport

We develop a quantitative model of the impact-ionizationand hot-electron–injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann transport equation, and we analytically find a self consistent distribution function in a two step process. From the electron distribution function, we calculate the probabilities of impact ionization and hot-electron injection as functions of channel current, drain voltage, and floating-gate voltage. We compare our analytical model results to measurements in long-channel devices. The model simultaneously fits both the hot-electron- injection and impact-ionization data. These analytical results yield an energydependent impact-ionization collision rate that is consistent with numerically calculated collision rates reported in the literature

Bias Voltage and Temperature Dependence of Hot Electron Magnetotransport

We present a qualitative model study of energy and temperature dependence of hot electron magnetotransport. This model calculations are based on a simple argument that the inelastic scattering strength of hot electrons is strongly spin and energy dependent in the ferromagnets. Since there is no clear experimental data to compare with this model calculations, we are not able to extract clear physics from this model calculations. However, interestingly this calculations display that the magnetocurrent increases with bias voltage showing high magnetocurrent if spin dependent imaginary part of proper self energy effect has a substantial contribution to the hot electron magnetotransport. Along with that, the hot electron magnetotransport is strongly influence by the hot electron spin polarization at finite temperatures

A Graphene-based Hot Electron Transistor

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.Comment: 18 pages, 6 figure

Ballistic Hot Electron Transport in Graphene

We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time $\tau \sim 10^{-2}-10^{-1} \mathrm{ps}$ and the mean free path $l \sim 10-10^2 \mathrm{nm}$ for electron densities $n = 10^{12}-10^{13} \mathrm{cm}^{-2}$. In particular, we find that the mean free path exhibits a finite jump at the phonon energy $200 \mathrm{meV}$ due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.Comment: 4 page

InAs nanowire hot-electron Josephson transistor

At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with superconducting elements [8-12]. Here, we demonstrate an InAs NW Josephson transistor where supercurrent is controlled by hot-quasiparticle injection from normal-metal electrodes. Operational principle is based on the modification of NW electron-energy distribution [13-20] that can yield reduced dissipation and high-switching speed. We shall argue that exploitation of this principle with heterostructured semiconductor NWs opens the way to a host of out-of-equilibrium hybrid-nanodevice concepts [7, 21].Comment: 6 pages, 6 color figure

Dual-gated bilayer graphene hot electron bolometer

Detection of infrared light is central to diverse applications in security, medicine, astronomy, materials science, and biology. Often different materials and detection mechanisms are employed to optimize performance in different spectral ranges. Graphene is a unique material with strong, nearly frequency-independent light-matter interaction from far infrared to ultraviolet, with potential for broadband photonics applications. Moreover, graphene's small electron-phonon coupling suggests that hot-electron effects may be exploited at relatively high temperatures for fast and highly sensitive detectors in which light energy heats only the small-specific-heat electronic system. Here we demonstrate such a hot-electron bolometer using bilayer graphene that is dual-gated to create a tunable bandgap and electron-temperature-dependent conductivity. The measured large electron-phonon heat resistance is in good agreement with theoretical estimates in magnitude and temperature dependence, and enables our graphene bolometer operating at a temperature of 5 K to have a low noise equivalent power (33 fW/Hz1/2). We employ a pump-probe technique to directly measure the intrinsic speed of our device, >1 GHz at 10 K.Comment: 5 figure

Hot-electron thermocouple and the diffusion thermopower of two-dimensional electrons in GaAs

A simple hot-electron thermocouple is realized in a two-dimensional electron system (2DES) and used to measure the diffusion thermopower of the 2DES at zero magnetic field. This hot-electron technique, which requires no micron-scale patterning of the 2DES, is much less sensitive than conventional methods to phonon-drag effects. Our thermopower results are in good agreement with the Mott formula for diffusion thermopower for temperatures up to T~2 K

Effects of laser wavelength and density scalelength on absorption of ultrashort intense lasers on solid-density targets

Hot electron temperatures and electron energy spectra in the course of interaction between intense laser pulse and overdense plasmas are reexamined from a viewpoint of the difference in laser wavelength. The hot electron temperature measured by a particle-in-cell simulation is scaled by $I$ rather than $I \lambda^2$ at the interaction with overdense plasmas with fixed ions, where $I$ and $\lambda$ are the laser intensity and wavelength, respectively.Comment: 12th International Congress on Plasma Physics, 25-29 October 2004, Nice (France