47,893 research outputs found
AlGaAs inverted strip buried heterostructure lasers
Inverted strip buried heterostructure lasers have been fabricated. These lasers have threshold currents and quantum efficiencies that are comparable to those of conventional buried heterostructure lasers. The optical mode is confined by a weakly guiding strip loaded waveguide which makes possible operation in the fundamental transverse mode for larger stripe widths than is possible for conventional buried heterostructure lasers. Scattering of the laser light by irregularities in the sidewalls of the waveguide, which can be a serious problem in conventional buried heterostructure lasers, is also greatly reduced in these lasers
Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures
Graphene/MoS2 heterostructures are formed by combining the nanosheets of
graphene and monolayer MoS2. The electronic features of both constituent
monolayers are rather well-preserved in the resultant heterostructure due to
the weak van der Waals interaction between the layers. However, the proximity
of MoS2 induces strong spin orbit coupling effect of strength ~1 meV in
graphene, which is nearly three orders of magnitude larger than the intrinsic
spin orbit coupling of pristine graphene. This opens a bandgap in graphene and
further causes anticrossings of the spin-nondegenerate bands near the Dirac
point. Lattice incommensurate graphene/MoS2 heterostructure exhibits
interesting moire' patterns which have been observed in experiments. The
electronic bandstructure of heterostructure is very sensitive to biaxial strain
and interlayer twist. Although the Dirac cone of graphene remains intact and no
charge-transfer between graphene and MoS2 layers occurs at ambient conditions,
a strain-induced charge-transfer can be realized in graphene/MoS2
heterostructure. Application of a gate voltage reveals the occurrence of a
topological phase transition in graphene/MoS2 heterostructure. In this chapter,
we discuss the crystal structure, interlayer effects, electronic structure,
spin states, and effects due to strain and substrate proximity on the
electronic properties of graphene/MoS2 heterostructure. We further present an
overview of the distinct topological quantum phases of graphene/MoS2
heterostructure and review the recent advancements in this field.Comment: 31 pages, 12 figure
Planar Heterostructure Graphene -- Narrow-Gap Semiconductor -- Graphene
We investigate a planar heterostructure composed of two graphene films
separated by a narrow-gap semiconductor ribbon. We show that there is no the
Klein paradox when the Dirac points of the Brillouin zone of graphene are in a
band gap of a narrow-gap semiconductor. There is the energy range depending on
an angle of incidence, in which the above-barrier damped solution exists.
Therefore, this heterostructure is a "filter" transmitting particles in a
certain range of angles of incidence upon a potential barrier. We discuss the
possibility of an application of this heterostructure as a "switch".Comment: 9 pages, 2 figure
Schottky nanocontacts on ZnO nanorod arrays
We report on fabrication and electrical characteristics of ZnO nanorod Schottky diode arrays. High quality ZnO nanorods were grown for the fabrication of the Schottky diodes using noncatalytic metalorganic vapor phase epitaxy and Au was evaporated on the tips of the vertically well-aligned ZnO nanorods. I-V characteristics of both bare ZnO and Au/ZnO heterostructure nanorod arrays were measured using current-sensing atomic force microscopy. Although both nanorods exhibited nonlinear and asymmetric I-V characteristic curves, Au/ZnO heterostructure nanorods demonstrated much improved electrical characteristics: the reverse-bias breakdown voltage was improved from -3 to -8 V by capping a Au layer on the nanorod tips. The origin of the enhanced electrical characteristics for the heterostructure nanorods is suggested. (C) 2003 American Institute of Physics.X11326sciescopu
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