ReaxFF Reactive Force Field for the Y-Doped BaZrO_3 Proton Conductor with Applications to Diffusion Rates for Multigranular Systems

Proton-conducting perovskites such as Y-doped BaZrO3 (BYZ) are promising candidates as electrolytes for a proton ceramic fuel cell (PCFC) that might permit much lower temperatures (from 400 to 600 °C). However, these materials lead to relatively poor total conductivity (∼10^−4 S/cm) because of extremely high grain boundary resistance. In order to provide the basis for improving these materials, we developed the ReaxFF reactive force field to enable molecular dynamics (MD) simulations of proton diffusion in the bulk phase and across grain boundaries of BYZ. This allows us to elucidate the atomistic structural details underlying the origin of this poor grain boundary conductivity and how it is related to the orientation of the grains. The parameters in ReaxFF were based entirely on the results of quantum mechanics (QM) calculations for systems related to BYZ. We apply here the ReaxFF to describe the proton diffusion in crystalline BYZ and across grain boundaries in BYZ. The results are in excellent agreement with experiment, validating the use of ReaxFF for studying the transport properties of these membranes. Having atomistic structures for the grain boundaries from simulations that explain the overall effect of the grain boundaries on diffusion opens the door to in silico optimization of these materials. That is, we can now use theory and simulation to examine the effect of alloying on both the interfacial structures and on the overall diffusion. As an example, these calculations suggest that the reduced diffusion of protons across the grain boundary results from the increased average distances between oxygen atoms in the interface, which necessarily leads to larger barriers for proton hopping. Assuming that this is the critical issue in grain boundary diffusion, the performance of BYZ for multigranular systems might be improved using additives that would tend to precipitate to the grain boundary and which would tend to pull the oxygens atoms together. Possibilities might be to use a small amount of larger trivalent ions, such as La or Lu or of tetravalent ions such as Hf or Th. Since ReaxFF can also be used to describe the chemical processes on the anode and cathode and the migration of ions across the electrode-membrane interface, ReaxFF opens the door to the possibility of atomistic first principles predictions on models of a complete fuel cell

Li-diffusion accelerates grain growth in intercalation electrodes: a phase-field study

Grain boundary migration is driven by the boundary's curvature and external loads such as temperature and stress. In intercalation electrodes an additional driving force results from Li-diffusion. That is, Li-intercalation induces volume expansion of the host-electrode, which is stored as elastic energy in the system. This stored energy is hypothesized as an additional driving force for grain boundaries and edge dislocations. Here, we apply the 2D Cahn-Hilliard$-$phase-field-crystal (CH-PFC) model to investigate the coupled interactions between highly mobile Li-ions and host-electrode lattice structure, during an electrochemical cycle. We use a polycrystalline FePO$_{4}$/ LiFePO$_{4}$ electrode particle as a model system. We compute grain growth in the FePO$_{4}$ electrode in two parallel studies: In the first study, we electrochemically cycle the electrode and calculate Li-diffusion assisted grain growth. In the second study, we do not cycle the electrode and calculate the curvature-driven grain growth. External loads, such as temperature and stress, did not differ across studies. We find the mean grain-size increases by $\sim11\%$ in the electrochemically cycled electrode particle. By contrast, in the absence of electrochemical cycling, we find the mean grain-size increases by $\sim2\%$ in the electrode particle. These CH-PFC computations suggest that Li-intercalation accelerates grain-boundary migration in the host-electrode particle. The CH-PFC simulations provide atomistic insights on diffusion-induced grain-boundary migration, edge dislocation movement and triple-junction drag-effect in the host-electrode microstructure.Comment: 11 pages, 9 figure

On the effect of Ti on Oxidation Behaviour of a Polycrystalline Nickel-based Superalloy

Titanium is commonly added to nickel superalloys but has a well-documented detrimental effect on oxidation resistance. The present work constitutes the first atomistic-scale quantitative measurements of grain boundary and bulk compositions in the oxide scale of a current generation polycrystalline nickel superalloy performed through atom probe tomography. Titanium was found to be particularly detrimental to oxide scale growth through grain boundary diffusion

Grain boundary diffusion in severely deformed Al-based alloy

Grain boundary diffusion in severely deformed Al-based AA5024 alloy is investigated. Different states are prepared by combination of equal channel angular processing and heat treatments, with the radioisotope $^{57}$Co being employed as a sensitive probe of a given grain boundary state. Its diffusion rates near room temperature (320~K) are utilized to quantify the effects of severe plastic deformation and a presumed formation of a previously reported deformation-modified state of grain boundaries, solute segregation at the interfaces, increased dislocation content after deformation and of the precipitation behavior on the transport phenomena along grain boundaries. The dominant effect of nano-sized Al$_3$Sc-based precipitates is evaluated using density functional theory and the Eshelby model for the determination of elastic stresses around the precipitates.Comment: 13 pages, 7 figure

Grain-boundary grooving and agglomeration of alloy thin films with a slow-diffusing species

We present a general phase-field model for grain-boundary grooving and agglomeration of polycrystalline alloy thin films. In particular, we study the effects of slow-diffusing species on grooving rate. As the groove grows, the slow species becomes concentrated near the groove tip so that further grooving is limited by the rate at which it diffuses away from the tip. At early times the dominant diffusion path is along the boundary, while at late times it is parallel to the substrate. This change in path strongly affects the time-dependence of grain boundary grooving and increases the time to agglomeration. The present model provides a tool for agglomeration-resistant thin film alloy design. keywords: phase-field, thermal grooving, diffusion, kinetics, metal silicidesComment: 4 pages, 6 figure

Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density

Radioactive silicon as a marker in thin-film silicide formation

A new technique using radioactive 31Si (half-life =2.62 h), formed in a nuclear reactor, as a marker for studying silicide formation is described. A few hundred angstroms of radioactive silicon is first deposited onto the silicon substrate, followed immediately by the deposition of a few thousand angstroms of the metal. When the sample is heated, a silicide is first formed with the radioactive silicon. Upon further silicide formation, this band of radioactive silicide can move to the surface of the sample if silicide formation takes place by diffusion of the metal or by silicon substitutional and/or vacancy diffusion. However, if the band of radioactive silicide stays at the silicon substrate interface it can be concluded that silicon diffuses by interstitial and/or grain-boundary diffusion. This technique was tested by studying the formation of Ni2Si on silicon at 330 °C. From a combination of ion-beam sputtering, radioactivity measurement, and Rutherford backscattering it is found that the band of radioactive silicide moves to the surface of the sample during silicide formation. From these results, implanted noble-gas marker studies and the rate dependence of Ni2Si growth on grain size, it is concluded that nickel is the dominant diffusing species during Ni2Si formation, and that it moves by grain-boundary diffusion